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YZPST-IXFN64N50 500V Power MOSFET manufacturer

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YZPST-IXFN64N50 500V Power MOSFET manufacturer
YZPST-IXFN64N50
500V Power MOSFET manufacturer
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Power MOSFET

: YZPST-IXFN64N50

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode



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Product parameters

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500V 
Current - Continuous Drain (Id) @ 25°C
61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
85mOhm @ 32A, 10V
Vgs(th) (Max) @ Id
5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
150nC @ 10V 
Vgs (Max)
±30V

Input Capacitance (Ciss) (Max) @ Vds
8700pF @ 25V

FET Feature
-
Power Dissipation (Max)
700W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC

Features

International standard package

Encapsulating epoxy meets

UL 94V-0, flammability classification

miniBLOC with Aluminium nitride

isolation

Fast recovery diode

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages


Easy to mount

Space savings

High power density



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