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Westcode thyristors direct phase control dcr1278

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Westcode thyristors direct phase control dcr1278
YZPST-DCR1278
HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
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L/C, T/T
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Features:

  . All Diffused Structure

   . Center Amplifying Gate Configuration                 

   . Blocking capabilty up to 4200 volts

   . Guaranteed Maximum Turn-Off Time

   . High dV/dt Capability

   . Pressure Assembled Device

Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

  4200

4200

4300

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

25 mA 100 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000V/ µsec


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onducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average   value of on-state current

IT(AV)


1100


A

Sinewave,180o   conduction,Tc=65oC

RMS   value of on-state current

ITRMS


2000


A

Nominal   value

Peak   one cPSTCle surge

(non   repetitive) current

 

ITSM


-

 

16.4


KA

 

KA

8.3   msec (60Hz), sinusoidal wave-

shape,   180o conduction, Tj = 125 oC

10.0   msec (50Hz), sinusoidal wave-

shape,   180o conduction, Tj = 125 oC

I   square t

I2t


1.35x106


A2s

8.3   msec and 10.0 msec

Latching   current

IL


300


mA

VD   = 24 V; RL= 12 ohms

Holding   current

IH


-


mA

VD   = 24 V; I = 2.5 A

Peak   on-state voltage

VTM


2.2


V

ITM   = 2900   A; Duty cPSTCle £ 0.01%; Tj = 25 oC

Critical   rate of rise of on-state

current   (5, 6)

di/dt


-


A/ms

Switching   from VDRM £ 1000 V,

non-repetitive

Critical   rate of rise of on-state

current   (6)

di/dt


100


A/ms

Switching   from VDRM £ 1000 V

ELECTRICAL CHARACTERISTICS AND RATINGS

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak   gate power dissipation

PGM


-


W

tp   = 40 us

Average   gate power dissipation

PG(AV)


-


W


Peak   gate current

IGM


-


A


Gate   current required to trigger all units

IGT


-

400

-


mA

mA

mA

VD   = 6 V;RL = 3 ohms;Tj = -40 oC

VD   = 6 V;RL = 3 ohms;Tj = +25 oC

VD   = 6 V;RL = 3 ohms;Tj = +125oC

Gate   voltage required to trigger all units

 

 

VGT


-

4.0

-

 


V

V

V

VD   = 6 V;RL = 3 ohms;Tj = -40 oC

VD   = 6 V;RL = 3 ohms;Tj = 0-125oC

VD   = Rated VDRM; RL = 1000 ohms;

Tj   = + 125 oC

Peak   negative voltage

VGRM


-


V


Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay   time

td


-

-

ms

ITM   = 50 A; VD =   Rated VDRM

Gate   pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off   time (with VR = -50 V)

tq


-

-

ms

ITM   = 1000 A; di/dt = 25 A/ms;

VR   ³   -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM;   VG = 0;

Tj   = 125 oC; Duty cPSTCle ³ 0.01%

Reverse   recovery charge

Qrr


*


mC

ITM   = 1000 A; di/dt = 25 A/ms;

VR   ³   -50 V

       * For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating   temperature

Tj

-40

+125


oC


Storage   temperature

Tstg

-40

+150


oC


Thermal   resistance - junction to case

RQ (j-c)


-

-


oC/W

Double   sided cooled

Single   sided cooled

Thermal   resistamce - case to sink

RQ (c-s)


-

-


oC/W

Double   sided cooled *

Single   sided cooled *

Thermal   resistamce - junction to sink

RQ (j-s)


0.024

-


oC/W

Double   sided cooled *

Single   sided cooled *

Mounting   force

P

20

24


kN


Weight

W



-

g


       * Mounting surfaces smooth, flat and greased

CASE OUTLINE AND DIMENSIONS

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HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS

Notes:

All ratings are specified for Tj=25 oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal

      waveform over the temperature range  -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential

     waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397,

      Section 5-2-2-6. The value defined would be in addi- tion to that obtained from

      a snubber circuit, comprising a 0.2 mF capacitor and 20 ohms resistance in parallel

      with the thristor under test.

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