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Westcode Thyristor

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Westcode Thyristor
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Features:

. All Diffused Structure

. Spoke Amplifying Gate Configuration

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

 

Blocking - Off State

Device Type

VRRM (1)

VDRM(1)

VRSM (1)

 KP4000A

6000

6000

6200


VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

30 mA 200mA (3)

Critical rate of voltage rise

dV/dt (4)

1000V/ µsec


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Notes:

All ratings are specified for Tj=25 °C unless otherwise stated.
(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range    -40 to +125°C.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 °C.
(4) Minimum value for linear and exponential waveshape to 70% rated VDRM. Gate open. Tj = 125 °C.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section5-2-2-6. The value defined would be in addi-tion to that obtained from a snubber circuit, comprising a 0.2 µF capacitor
and 20 ohmsresistance in parallel with the thristor under
test.

 CONDUCTING - ON STATE 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

4000

 

A

Sinewave,180°  conduction,Tc=85°C

RMS value of on-state current

ITRMS

 

6200

 

A

Nominal value

Peak one cycle surge   (non repetitive) current

 ITSM

 

57000

 

 A

10.0 msec (50Hz), sinusoidal wave- shape, 180° conduction, Tj = 125°C

I square t

I2t

 

12x10⁶

 

A²s

10.0 msec

Latching current

IL

 

3

 

A

VD = 24 V; RL= 12 ohms

Holding current

IH

 

350

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

2.80

 

V

ITM = 6000 A;

Critical rate of rise of on-state urrent (5, 6)

Di/dt

 

800

 

A/µs

Switching from VDRM  ≤ 3000 V, non-repetitive

Critical rate of rise of on-state current (6)

Di/dt

 

200

 

A/µs

Switching from VDRM  ≤ 3000 V


Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

200

 

W

Tp = 40 us

Average gate power dissipation

PG(AV)

 

5

 

W

 

Peak gate current

IGM

 

20

 

A

 

Gate current required to trigger all units

IGT

 

300

 

MA

VD = 6 V; RL = 3 ohms;Tj  = +25 °C

Gate voltage required to trigger all units

VGT

 

 3

 

 V

 VD = 6 V; RL = 3 ohms;Tj  = 25 °C

Peak negative voltage

VGRM

 

20

 

V


 

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

Td

 

 3.0

 

µs

ITM = 50 A; VD = 2000 V

Gate pulse: VG = 20 V; RG = 20 ohms;

Tr = 0.1 µs; tp = 20 µs

Turn-off time (with VR = -50 V)

Tq

 

 600

 250

 µs

ITM > 2000 A; di/dt = 10 A/µs;

VR ≥ -50 V; Re-applied dV/dt = 500

V/µs linear to 2000 V; VG = 0;

Tj = 125 °C; Duty cycle ≥ 0.01%

Reverse recovery current

Irr

 

 300

 

A

ITM > 2000 A; di/dt = 10 A/µs; VR ≥ -50 V

 

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Mounting surfaces smooth, flat and

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

°C

 

Storage temperature

Tstg

-40

+150

 

°C

 

Thermal resistance - junction to case

RΘ (j-c)

 

0.006

 

°C/W

Double sided cooled

Thermal resistamce - case to sink

RΘ(c-s)

 

0.002

 

°C/W

Double sided cooled *

 

 

 

 

 

 

*

Mounting force

F

 

108

 

KN


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