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Types of Power Thyristors Phase Control Thyristors 2000V DCR1004

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Types of Power Thyristors Phase Control Thyristors 2000V DCR1004
YZPST-DCR1004
HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
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L/C, T/T
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Features:

  . All Diffused Structure

   . Center Amplifying Gate Configuration                 

   . Blocking capabilty up to 2100 volts

   . Guaranteed Maximum Turn-Off Time

   . High dV/dt Capability

   . Pressure Assembled Device

Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

2200

2200

2300


VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

15 mA 65 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000V/ µsec


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HIGH POWER THYRISTOR PHASE CONTROL

YZPST-DCR1004  

DCR1004SD2323

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)


1300


A

Sinewave,180o conduction,Tc=65oC

RMS value of on-state current

ITRMS


2000


A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

 

ITSM


20000

 

18000


A

 

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t


1.7x106


A2s

8.3 msec and 10.0 msec

Latching current

IL


800


mA

VD = 24 V; RL= 12 ohms

Holding current

IH


400


mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM


1.75


V

ITM = 3000 A; Duty cPSTCle £ 0.01%

Critical rate of rise of on-state

current (5, 6)

di/dt


600


A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt


200


A/ms

Switching from VDRM £ 1000 V


ELECTRICAL CHARACTERISTICS AND RATINGS (cont’d)      

Gating

 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM


200


W

t= 40 us

Average gate power dissipation

PG(AV)


5


W


Peak gate current

IGM


10


A


Gate current required to trigger all units

IGT


300

150

125


mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT

 

 

0.30

5

3

 


V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM


5


V


 

 

 

 Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td


1.5

0.7

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq


250

150

ms

ITM = 1000 A; di/dt = 25 A/ms;

VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr


*


mC

ITM = 1000 A; di/dt = 25 A/ms;

VR ³ -50 V

               * For guaranteed max. value, contact factory.

 

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125


oC


Storage temperature

Tstg

-40

+150


oC


Thermal resistance - junction to case

RQ (j-c)


0.025

0.050


oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)


0.010

0.020


oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

24.5

26.7


kN


Weight

W



460

g


 

 

  * Mounting surfaces smooth, flat and greased

 

CASE OUTLINE AND DIMENSIONS

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HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS

Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal

     waveform over the temperature range  -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM.

     Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard

      RS-397, Section 5-2-2-6. The value defined would be in addi-tion to that

      obtained from a snubber circuit, comprising a 0.2 mF capacitor and 20

      ohmsresistance in parallel with the thristor under test.

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