We all know that the thyristor
di/dt, is we often say that the current rate of climb.
In the use of thyristor, di/dt the change of the parameter and the performance of the thyristor has close relationship.
You go into more detail about thyristor are below the four considerations of state current rate of climb too high: (
Thyristor di/dt bear ability have a direct relationship with chip junction temperature, di/dt to bear ability as temperatures there will be a significant reduction.
So the user must ensure that the device of the cooling conditions when using.
Requirements in the process of work, the ordinary thyristor: Tj≤
C, high frequency, fast thyristor: Tj≤
Thyristor di/dt bear ability reflects the actual device of the current rapid opening ability, it is highly affected by the device gate trigger conditions.
Strong rise very steep trigger pulse is proposed, which can significantly reduce the opening time and opening device loss, di/dt bear ability enhancement device.
Trigger for: trigger current amplitude: IGM = (
4 to 10 times)
Trigger current rise time (tr is less than 1 & micro;
Thyristor under high di/dt, can produce local transient high temperature in the chip, the local transient high temperature in the long-term work affects the working life of the device.
The user at any time, therefore, should ensure that the di/dt shall not exceed the device manufacturers e. , given and left a certain margin.
Thyristor di/dt and its relationship between opening loss is great, thyristor high di/dt is used in high frequency applications, to consider opening loss to rise caused by junction temperature rise, the user should consider to reduce the device by the state of current or enhance device cooling capabilities.
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