Home   |   PRODUCT   |   Power Thyristors   |  

Thyristor semiconductor devices power thyristor DCR504

这里可以自定义设置
Thyristor semiconductor devices power thyristor DCR504
YZPST-DCR504
HIGH POWER THYRISTOR PHASE CONTROL APPLICATIONS
B站不支持收货地址
B站不支持库存规格
Payment
L/C, T/T
参数暂无数据
多属性暂无数据

Features:

  . All Diffused Structure

   . Circular Amplifying Gate Configuration               

   . Blocking capabilty up to 1200 volts

   . Guaranteed Maximum Turn-Off Time

   . High dV/dt Capability

   . Pressure Assembled Device

Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

 1600

1600

1700

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

5 mA20 mA (3)

Critical rate of voltage rise

dV/dt (4)

500V/ µsec


Add success, do you want to check your shopping cart?

暂无分享

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average   value of on-state current

IT(AV)


300


A

Sinewave,180o   conduction,Tc=65oC

RMS   value of on-state current

ITRMS


480


A

Nominal   value

Peak   one cycle surge

(non   repetitive) current

 

ITSM


4200

 

4400


A

 

A

8.3   msec (60Hz), sinusoidal wave-

shape,   180o conduction, Tj = 125 oC

10.0   msec (50Hz), sinusoidal wave-

shape,   180o conduction, Tj = 125 oC

I   square t

I2t


68000


A2s

8.3   msec

Latching   current

IL



300

mA

VD   = 24 V; RL= 12 ohms

Holding   current

IH



200

mA

VD   = 24 V; I = 2.5 A

Peak   on-state voltage

VTM


2.98


V

ITM   = 1500 A; Tj = 25 oC

Critical   rate of rise of on-state

current   (5, 6)

di/dt


300


A/ms

Switching   from VDRM £ 1000 V,

non-repetitive

Critical   rate of rise of on-state

current   (6)

di/dt


150


A/ms

Switching   from VDRM £ 1000 V

ELECTRICAL CHARACTERISTICS AND RATINGS (cont’d)     

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak   gate power dissipation

PGM


10


W

tp   = 40 us

Average   gate power dissipation

PG(AV)


2


W


Peak   gate current

IGM


3


A


Gate   current required to trigger all units

IGT


200

150

125


mA

mA

mA

VD   = 6 V;RL = 3 ohms;Tj = -40 oC

VD   = 6 V;RL = 3 ohms;Tj = +25 oC

VD   = 6 V;RL = 3 ohms;Tj = +125oC

Gate   voltage required to trigger all units

 

 

VGT

 

 

0.30

3

2.5

 


V

V

V

VD   = 6 V;RL = 3 ohms;Tj = -40 oC

VD   = 6 V;RL = 3 ohms;Tj = 0-125oC

VD   = Rated VDRM; RL = 1000 ohms;

Tj   = + 125 oC

Peak   negative voltage

VGRM


5


V


Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay   time

td


1.0


ms

ITM   = 100 A; VD   =  VDRM

Gate   pulse: VG = 10 V; RG = 25 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off   time (with VR = -50 V)

tq


200

 


ms

ITM   > 250 A;   di/dt = 10 A/ms;

VR   ³   -50 V; Re-applied dV/dt = 20 V/ms linear to VDRM   ;

Tj   = 125 oC; Duty cycle ³ 0.01%

Reverse   recovery charge

Qrrr


200


mCb

ITM   > 400 A;   di/dt = 10 A/ms;

  THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating   temperature

Tj

-40

+125


oC


Storage   temperature

Tstg

-40

+150


oC


Thermal   resistance - junction to case

RQ (j-c)


0.095


oC/W

Double   sided cooled

Thermal   resistamce - case to sink

RQ (c-s)


0.06


oC/W

Double   sided cooled *

Mounting   force

P

3.2

3.9


kN


Weight

W



57

g.


       * Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data                                                    

CASE OUTLINE AND DIMENSIONS.   

HIGH POWER THYRISTOR PHASE CONTROL APPLICATIONS

Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied

      50Hz/60zHz sinusoidal waveform over the

      temperature range  -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential

     waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance

      with EIA/NIMA Standard RS-397, Section

      5-2-2-6. The value defined would be in addi-

      tion to that obtained from a snubber circuit,

      comprising a 0.2 mF capacitor and 20 ohms

      resistance in parallel with the thristor under test.

ONLINE CONSULTATION

 

社媒暂无评论
Chat Online 编辑模式下无法使用
Chat Online inputting...