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Thyristor Power Controller Inverter Grade Thyristor 800v

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Thyristor Power Controller Inverter Grade Thyristor 800v
YZPST-S6035
POWER THYRISTOR FOR INVERTER APPLICATIONS Inverter Grade Thyristors Version Type : PSTS6035
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Inverter Grade Thyristors   Version Type : PSTS6035

 Features

• RoHS Compliant

• All diffused design

• Glass-passivated chip

• Guaranteed high dV/dt

• Guaranteed high dI/dt

• High surge current capability

• Low thermal impedance

• High speed performance , tq is less than 35μSec

• Electrically-isolated package

• High voltage capability — 200 V to 1000 V

 

Typical Applications

• Inverters

• Choppers

• Induction heating

• All types of force-commutated converters


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MAIN FEATURES

 

 

Symbol

Value

Unit

IT(RMS)

35

A

VDRM/RRM

 

200/400/600 / 800 / 1000

 

V

VTM

 

1.8

 

V

 

ABSOLUTE MAXIMUM RATINGS

 

 

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

- 40 to +150

Operrating junction temperature range

Tj

- 40 to +125

 

Repetitive Peak Off-state Voltage

 

Tj=25°C

VDRM

200/400/600 /

800 / 1000

 

 

V

 

Repetitive Peak Reverse Voltage

 

Tj=25°C

 

VRRM

200/400/600 /

800 / 1000


 

Non repetitive Surge Peak Off-state Voltage

 

 

tp=10ms,Tj=25°C

VDSM

VDRM+100

 

 

V

Non repetitive Peak Reverse Voltage

VRSM

VRRM+100

 

 

RMS on-state current (full sine wave)

TO - P3 Tc=80°C

 

 

IT(RMS)

 

 

35

 

 

A

TG - C  Tc=90°C

 

 

Non repetitive surge peak on-state current (full cycle,Tj=25°C)

f = 60 Hz t=16.7ms

 

 

ITSM

500

 

 

A

f = 50 Hz t=20ms

425

I2t Value for fusing

tp=10ms

I2t

1035

A2s

 

Critical rate of rise of on-state current IG=2×|GT, tr<100 ns, f =120Hz, Tj=125°C

 

dI/dt

 

150

 

A/ μs

 

Peak gate current tp=20us,Tj=125°C

 

IGM

3.5

 

A

 

Peak Gate Power Dissipation tp=20us,Tj=125°C

 

PGM

 

35

 

W

 

Average gate power dissipation Tj=125°C

 

PG(AV)

 

0.8

 

W

 


 

ELECTRICAL CHARACTERISTICS(Tj=25°C unless otherwise specified)

 

 

 

 

Symbol

 

Test Condition


Limits

 

Unit

BW(B)

IGT

 

 

VD=12V RL=33

MAX.

40

mA

VGT

MAX.

1.5

V

VGD

VD=VDRM RL=3.3K Tj =12C

MIN.

0.2

V

IL

 

IG=1.2IGT

MAX.

100

mA

IH

IT = 200mA

MAX

50

mA

dV/dt

VD=67%VDRM gate open Tj=125°C

MIN.

400

V/μs

Tq

IT = 1A , dV/dt = 20V/s , di/dt = — 10A/s

MAX.

35

μs

Tgt


MAX.

2

μs

 

STATIC CHARACTERISTICS

 

 

Symbol

Parameter

Value(MAX.)

Unit

VTM

l TM=6A,tp=380μs

Tj=2C

1.80

V

 

I DRM

I RRM

 

VD=VDRM VR=VRRM

Tj=2C

10

μA

Tj=125°C

2

mA

THERMAL RESISTANCES

 

 

Symbol

Parameter

Value

Unit

Rth( J- C)

Junction to Case(AC)

TO - P3

0.9

/ W






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