Thyristor module | thyristor manufacturers | | silicon controlled rectifier module

by:Positioning     2020-12-27
Thyristor module and IGBT power semiconductor devices. Thyristor module and IGBT blocking high pressure mainly depends on the ability of device structure specific p-n junction in the reverse breakdown voltage. In power devices in the reverse breakdown voltage is often partial PN junction and end surface features or outside atmosphere by PN junction, appear breakdown phenomenon in advance. And thyristor module and IGBT is the end of the end in order to avoid the phenomenon of specially designed special structure. Junction termination structure can be divided into two categories, truncation and expanded. Thyristor module of the surface of the wafer edge shape, corrosion, surface passivation and process is designed to reduce the surface electric field, such as blocking interference, this is the usual practice of truncation type. IGBT and brake pipe module is different with planar process, junction terminal is expanded. Edge set some extension structure in the main, the main junction depletion region extend outward effect, thus reducing its electric field intensity, avoid breakdown in advance. Warm prompt: zhejiang co. , LTD. , the production of silicon controlled rectifier thyristor module has 15 years experience of application of matching installation thrust plate radiator solves the chint group in actual heat dissipation problem inverter power devices, hotline: 0577 - 62627555!
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