The birth of a new type of device is often face a big change, the entire unit system promote the development of power electronic technology forward.
Since 1957, the first thyristor
module, after more than 40 years of development and research, has been selling can turn off thyristor (
, insulated gate bipolar thyristor (
And so on more than 40 power semiconductor devices, is along the high frequency, high power, the direction of intelligent and modularization, this paper will briefly introduce modular development trend.
So-called module, the first is defined as two or more than two power semiconductor chip according to certain circuit couplet, RTV, elastic protection material such as silica gel, epoxy resin, sealed in an insulating shell, and insulation and thermal conductivity.
Since the 1970 s SemikronNurmbeg principle of the module (
The thyristor rectifier diode and only)
Since the introduction of power electronics technology and modularization has brought to the attention of the world power semiconductor company, develop and produce various kinds of internal electrical connection in the form of a power semiconductor module, such as thyristor, rectifier diode, the bidirectional thyristor, reverse guide, optically controlled thyristor, thyristor turn-off thyristor, power transistor (
, MOS controlled thyristor (
, power MOSFET, and insulated gate bipolar transistor (
Such as module, make the module technology is booming, proportion bigger and bigger in the device.
According to the United States in the early 1990 s, in the past ten years, under a 300 division of thyristor, rectifier diode, and more than 20 a darlington transistor has the market share from 90% to 20%, and the module of the device is from 10% to 80%, visible module development fast.
As MOS structure on the basis of the success of research and development of modern semiconductor device, i. e. the use of voltage control, drive power of small, simple control, power MOSFET and IGBT MOS controlled thyristor (
And the MOC control rectifier (
The emergence of the developed device chip and control circuit, driving circuit, over voltage, over current, overheat and under-voltage protection circuit and the diagnostic circuit combination, and seal in the same insulation shell intelligent power semiconductor module, namely the IPM.
In order to further improve the reliability of the system, to adapt to the power electronic technology development direction to high frequency change, miniaturization, modularization, some manufacturers on the basis of the IPM, add the function of the inverter, the inverter circuit (
All devices in the form of chip encapsulation within a module, as users dedicated power module (
, make no more traditional lead is connected, and the internal connection with ultrasonic welding, bonding, or way of pressure welding is linked together, make to minimize parasitic inductance, is advantageous to the device of high frequency.
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