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Thyristor Diode Module PST-DK13-800V

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Thyristor Diode Module PST-DK13-800V
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All diffused design

High current capabilities

High surge current capabilities

High rates voltages

High dV/dt

Low gate current

Dynamic gate

Low thermal impedance

Compact size and small weight

Typical Applications

High Power Drives

DC Motor Control

High Voltage Power Supplies

Medium power switching

DC power supplies

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Maximum Ratings And Characteristics

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

ITAV

Mean on-state current

70

A

Sinewave,180° conduction,Tc=80°C

ITRMS

RMS value of on-state current

110

A

Nominal value

 ITSM

Peak one cycle surge  (non repetitive) current

 1200

 A

10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 °C

I2t

I square t

7.2

KA²S

8.3 msec and 10.0 msec

IL

Latching current

200-

mA

VD = 12 V; RL= 12 ohms

IH

Holding current

150

mA

VD = 12 V; I = 2.5 A

 

VTM

 

Peak on-state voltage

 

2.35

 

V

ITM = 300 A; Duty cycle £ 0.01%;
       Tj = 25 °C

 

Di/dt

 

Critical rate of rise of on-state current

 non-repetitive

 -

 

A/ms


 

Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM

repetitive

200

BLOCKING

VDRM
VRRM

Repetitive peak off state voltage
Repetitive peak reverse voltage

 

800

 

V

 

VDSM
VRSM

Non repetitive peak off state voltage
Non repetitive peak reverse voltage

 

900

 

V

 

IDRM
IRRM

Repetitive  peak  off  state  current
Repetitive peak reverse	current

 

15

 

mA

 

Tj = 125 °C ,VRRM VDRM applied

DV/dt

Critical rate of voltage rise

200

V//ms

TJ=TJmax, linear to 80% rated VDRM

TRIGGEING

PG(AV)

Average gate power dissipation

3.0

W

 

PGM

Peak gate power dissipation

16

W

 

IGM

Peak gate current

-

A

 

IGT

Gate trigger current

200

mA

TC = 25 °C

VGT

Gate trigger voltage

3.0

V

TC = 25 °C

VT(T0)

Treshold voltage

1.65

V

 

RT

Slope resistance

3.5

mΩ

 

VGD

Gate non-trigger voltage

0.2

V

Tj = 125 °C

SWITCHING

 

Tq

 

Turn-off time

 

10

 

ms

ITM=550A, TJ=TJmax, di/dt=40A/μs, VR=50V, dv/dt=20V/μs, Gate 0V  100Ω, tp=500μs

 

Td

 

Delay time

 

-

Gate current A, di/dt=40A/μs,

Vd=0.67%VDRM, TJ=25 °C

Qrr

Reverse recovery charge

-

 


Symbol

Parameter

Values

Units

Test Conditions

Tj

Operating temperature

-40~125

°C

 

Tstg

Storage temperature

-40~150

°C

 

 R th (j-c)

Thermal  resistance  -  junction  to

 0.24

 °C/W

 

R th (c-s)

Thermal resistance - case to sink

0.08

°C/W

 

P

Mounting force

14

Nm

 

W

Weight

-

g

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