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Silicon rectifier diode high voltage diode 500mA

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Silicon rectifier diode high voltage diode 500mA
YZPST-CL05-08
High Frequency High Voltage Diode 500mA
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High Frequency High Voltage Diode 

YZPST-CL05-08

Characteristics

1. High junction temperature up to130℃

2. Low forward voltage drop, and small current leakage

3. Avalanche breakdown protection

4. Max reverse recovery time to 40nS

4. Excellent properties against HV surge impact

5. Axial leading wires which are weldable

6. Epoxy package with anti-corrosion properties on surface

 

Application

•  Rectification for microwave oven

• Industrial microwave power supplies

• HF X ray source

• Laser power supply

• Voltage multiplying circuits

• Rectification of power supplies for other electronic devices

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1.Main Specification

 

 

No.

 

           Item

 

Symbol

 

  Unit

 

Rating

 

Conditions

 

1

  1

 

   

Repetitive Peak Reverse Voltage

 

   VRRM

 

KV

   

    8


 

    2

 

 

Average Forward Current

 

 

  IF (AV)

 

 

   mA

 

 

  500

           Tamb=60 oC

50HZ Sine-half Wave

Rectification Average Value

 

    3

 

 

Forward Surge Current

 

 

 IFSM

 

 

A

 

 

15

           Tamb=25 oC

50HZ Sine-half Wave,One Shot

 

 

  4

 

Reverse Surge Current

 

 

 IRSM

 

μA  

 

 

-

 

Pulse width 1ms triangle wave single pulse

 

5

 

Maximum Junction Temperature

 

 

 

  Tjmax

 

oC

 

130


 

6

 

Storage Temperature

 

 Tstg

 

oC

 

-40~+130


 

 

 



























2.  Electric Specification

 

 NO.

 

           Item

 

Symbol

   Unit

 

   Rating

 

Test conditions

 

1

 

 Forward Voltage Drop

 

VFM

 

V

 

 15max

 

  IFM=300mA

 

2

     

 Normal Temperature Reverse Current

 

IRM1

 

μA

 

  5max

 

   VRM=8KV

 

3

 

 High Temperature Reverse Current

 

IRM2

 

μA

 

5max

   Tamb=100oC

   VRM=10KV

 

4

 

 Reverse Breakdown Voltage

 

VZ

 

 KV

 

   8

 

         IR=300mA

 

5

 

 Reverse Recovery Time

 

trr

 

nS

 

    100

 

IF=2mA, IRM=4mA  90%





















(Tamb=25 oC, unless otherwise specified)

3.  Application    

For high voltage rectification;

4. Derating of Forward Current

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