complementary silicon power transistors 2N3055/MJ2955
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Tape:YZPST-2n60 N-Channel MOSFET
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s
proprietary,planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Parameter | l | Value | Unit |
Drain-Source Voltage | VDSS | 600 | V |
Drain Current - Continuous | ID | 2.4 | A |
Drain Current - Pulsed | IDM | 9.6 | A |
Gate-Source Voltage | VGSS | ±30 | V |
Power Dissipation | PD | 64 | W |
Max. Operating Junction Temperature | Tj | 150 | ℃ |
Storage Temperature | Tstg | -55~150 | ℃ |
Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID =250μA | 600 | — | — | V |
Zero Gate Voltage Drain Current | IDSS | VDS =600V, VGS =0V | — | — | 10 | UA |
Gate-Body Leakage Current, Forward | IGSSF | VGS =30V, VDS =0V | — | — | 100 | UA |
Gate-Body Leakage Current, Reverse | IGSSR | VGS = -30V, VDS =0V | — | — | -100 | UA |
Gate Threshold Voltage | VGS(th) | VDS = VGS , ID =250μA | 3.0 | — | 5.0 | V |
Static Drain-Source On-Resistance | RDS(on) | VGS = 10 V, ID = 1.2 A | — | 3.7 | 4.7 | W |
Drain-Source Diode Forward Voltage | VSD | VGS = 0 V, IS = 2.4 A | — | — | 1.4 | V |
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