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Silicon Power Transistor 600V N-Channel MOSFET

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Silicon Power Transistor 600V N-Channel MOSFET
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Tape:YZPST-2n60   N-Channel MOSFET

DESCRIPTION

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s

proprietary,planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.


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Parameter

l

Value

Unit

Drain-Source Voltage

VDSS

600

V

 Drain Current - Continuous

 ID

2.4

 A

Drain Current - Pulsed

IDM

9.6

A

Gate-Source Voltage

VGSS

±30

V

Power Dissipation

PD

64

W

Max. Operating Junction Temperature

Tj

150


Storage Temperature

Tstg

-55~150

Parameter

Symbol

Test  Conditions

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID =250μA

600

  

 

V

Zero Gate Voltage Drain Current

IDSS

 VDS =600V, VGS =0V

 

  

10

UA

Gate-Body Leakage Current, Forward

IGSSF

 VGS =30V, VDS =0V

  

  

100

UA

Gate-Body Leakage Current, Reverse

IGSSR

VGS = -30V, VDS =0V

  

  

-100

UA

Gate Threshold Voltage

VGS(th)

VDS = VGS , ID =250μA

3.0

  

5.0

V

Static Drain-Source On-Resistance

RDS(on)

 VGS = 10 V, ID = 1.2 A

  

3.7

4.7

W

Drain-Source Diode Forward Voltage

VSD

 VGS = 0 V, IS = 2.4 A

  

  

1.4

V

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