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Silicon power diode hv high frequency 12kv

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Silicon power diode hv high frequency 12kv
YZPST-HV-600S12
600mA high voltage diode 12kv hv diode high frequency
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High Frequency High Voltage Diode 

YZPST-HV-600S12

Characteristics

1. High junction temperature up to130℃

2. Low forward voltage drop, and small current leakage

3. Avalanche breakdown protection

4. Max reverse recovery time to 80nS

4. Excellent properties against HV surge impact

5. Axial leading wires which are weldable

6. Epoxy package with anti-corrosion properties on surface

 

Application

•  Rectification for microwave oven

• Industrial microwave power supplies

• HF X ray source

• Laser power supply

• Voltage multiplying circuits

• Rectification of power supplies for other electronic devices


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Model

Repetitive Peak Reverse Voltage

VRRM  KV

Average Forward Rectified  Current

IO mA

MaximumForwardSurge Current

IFSM A

Maximum Peak Forward Voltage

VFM V,

Maximum DC Reverse Current

IRμA

Maximum Reverse Recovery Tme

trr nS

Ta=25℃

Ta=100℃

YZPST-HV

600S10

10

600

40

15.0

5.0

50

-

600S12

12

600

40

18.0

5.0

50

-

YZPST-HV

FOB

9

500

40

13.8

5.0

50

40

YZPST-HV

104

12

350

30

15.0

5.0

50

-

106

12

450

30

15.0

5.0

50

-

1.Main Specification

 

No.

 

           Item

 

Symbol

 

  Unit

 

Rating

 

Conditions

 

1

 

   

Repetitive Peak Reverse Voltage

 

   VRRM

 

KV

   

    12


 

    2

 

 

Average Forward Current

 

 

  IF (AV)

 

 

   mA

 

 

  600

           Tamb=60 oC

50HZ Sine-half Wave

Rectification Average Value

 

    3

 

 

Forward Surge Current

 

 

 IFSM

 

 

A

 

 

40

           Tamb=25 oC

50HZ Sine-half Wave,One Shot

 

 

  4

 

Reverse Surge Current

 

 

 IRSM

 

μA   

 

 

5

 

Pulse width 1ms triangle wave single pulse

 

5

 

Maximum Junction Temperature

 

 

 

  Tjmax

 

oC

 

130


 

6

 

Storage Temperature

 

 Tstg

 

oC

 

-40~+130































2.  Electric Specification

 

 NO.

 

           Item

 

Symbol

 

  Unit

 

   Rating

 

Test conditions

 

1

 

 Forward Voltage Drop

 

VFM

 

V

 

 18

 

  IFM=300mA

 

2

     

 Normal Temperature Reverse Current

 

IRM1

 

μA

 

5

 

   VRM=8KV

 

3

 

 High Temperature Reverse Current

 

IRM2

 

μA

 

5

   Tamb=100oC

   VRM=10KV

 

4

 

 Reverse Breakdown Voltage

 

VZ

 

 KV

 

 > 12

 

         IR=300mA

 

5

 

 Reverse Recovery Time

 

trr

 

nS

 

    80

 

IF=2mA, IRM=4mA  90%





















3.  Application    

 

For high voltage rectification;

 

4. Derating of Forward Current

 

QQ20160718155844.jpg

QQ20160718155907.jpg

HV-600S12 SIZE.jpg

Type

A

B(min)

Φ1

Φ2

600S10,600S12,

YZPST-HV FOB

22

20

7.5

1.2

104,106

 


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