Custom Thyristor Triac Factory,Power thyristor Supplier

PRODUCT SUMMARY

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS

SINGLE-PHASE BRIDGE

THREE-PHASE BRIDGE

UNITS

Capacitive input filter T A = 55 °C, T J = 125 °C,

common heatsink of 1 °C/W

MAJOR RATINGS AND CHARACTERISTICS
PARAMETER	TEST CONDITIONS	VALUES	UNITS
IT(AV)	Sinusoidal waveform	16	A
IRMS		25	A
VRRM/VDRM		800/1200	V
ITSM		300	A
VT	16 A, T J = 25 °C	1.25	V
dV/dt		500	V/µs
dI/dt		150	A/µs
TJ		- 40 to 125	°C

VOLTAGE RATINGS
PART NUMBER	VRRM, MAXIMUM PEAK REVERSE VOLTAGE V	VDRM, MAXIMUM PEAK DIRECT VOLTAGE V	I RRM /I DRM AT 125 °C mA
25TTS08	800	800	10
25TTS12	1200	1200	10

High Power Products Phase Control SCR, 25 A

ABSOLUTE MAXIMUM RATINGS
PARAMETER	SYMBOL	TEST CONDITIONS		VALUES		UNITS
				TYP.	MAX.
Maximum average on-state current	IT(AV)	T C = 93 °C, 180° conduction half sine wave		16		A
Maximum RMS on-state current	IRMS			25
Maximum peak, one-cycle, non-repetitive surge current	ITSM	10 ms sine pulse, rated VRRM applied		300
		10 ms sine pulse, no voltage reapplied		350
Maximum I²t for fusing	I²t	10 ms sine pulse, rated VRRM applied		450		A²s
		10 ms sine pulse, no voltage reapplied		630
Maximum I²t for fusing	I²t	t = 0.1 to 10 ms, no voltage reapplied		6300		A²√s
Maximum on-state voltage drop	VTM	16 A, T J = 25 °C		1.25		V
On-state slope resistance	Rt	T J = 125 °C		12.0		m Ω
Threshold voltage	VT(TO)			1.0		V
Maximum reverse and direct leakage current	IRM/IDM	T J = 25 °C	VR = Rated VRRM/VDRM	0.5		mA
		T J = 125 °C		10
Holding current	IH	Anode supply = 6 V, resistive load, initial IT = 1 A		-	100
Maximum latching current	IL	Anode supply = 6 V, resistive load		200
Maximum rate of rise of off-state voltage	DV/dt			500		V/µs
Maximum rate of rise of turned-on current	DI/dt			150		A/µs

TRIGGERING
PARAMETER	SYMBOL	TEST CONDITIONS	VALUES	UNITS
Maximum peak gate power	PGM		8.0	W
Maximum average gate power	PG(AV)		2.0	W
Maximum peak positive gate current	+ IGM		1.5	A
Maximum peak negative gate voltage	- VGM		10	V
Maximum required DC gate current to trigger	IGT	Anode supply = 6 V, resistive load, TJ = - 10°C	60	mA
		Anode supply = 6 V, resistive load, TJ = 25°C	45
		Anode supply = 6 V, resistive load, TJ = 125°C	20
Maximum required DC gate voltage to trigger	VGT	Anode supply = 6 V, resistive load, TJ = - 10°C	2.5	V
		Anode supply = 6 V, resistive load, TJ = 25 °C	2.0
		Anode supply = 6 V, resistive load, TJ = 125°C	1.0
Maximum DC gate voltage not to trigger	VGD	TJ = 125 °C, VDRM = Rated value	0.25
Maximum DC gate current not to trigger	IGD	TJ = 125 °C, VDRM = Rated value	2.0	mA

SWITCHING
PARAMETER	SYMBOL	TEST CONDITIONS	VALUES	UNITS
Typical turn-on time	tgt	TJ = 25 °C	0.9	µs
Typical reverse recovery time	trr	TJ = 125 °C	4
Typical turn-off time	tq	TJ = 125 °C	110

Phase Contro l SCR, 25 A High Power Products

THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER		SYMBOL	TEST CONDITIONS	VALUES	UNITS
Maximum junction and storage temperature range		TJ, TStg		- 40 to 125	°C
Maximum thermal resistance, junction to case		RthJC	DC operation	1.1	°C/W
Maximum thermal resistance, junction to ambient		RthJA		62
Typical thermal resistance, case to heatsink		RthCS	Mounting surface, smooth and greased	0.5
Approximate weight				2	g
				0.07	oz.
Mounting torque	minimum			6 (5)	kgf · cm (lbf · in)
	maximum			12 (10)
Marking device			Case style TO-220AB	25TTS08
				25TTS12

ORDERING INFORMATION TA BLE

PSTSK008DRP SCRS

Package TO-252

这里可以自定义设置

Main Feature (Tj=25℃)

Absolute ratings (Limiting Values)

Symbol	Parameter	Value	Unit
IT(RMS)	RMS on-state current (180° conduction angle)	12	A
IT(AV)	AV on-state current (180° conduction angle)	7.5	A
ITSM	Non repetitive surge peak on-state Current (tp=10ms)	100	A
I2t	(tp=10ms)	50	A2S
IGM	Peak gate current(tp=20us)	2	A
PGM	Peak gate power	5	W
PG(AV)	Average gate power	0.5	W
Tstg Tj	Storage temperature Operating junction temperature	-40--+150 -40--+125	℃

Thermai Resistances

Electrical characteristics( Tj=25 ℃ unless otherwise stated )

Measure of package

(TO-252 Type)

Measure of package

Silicon Controlled Rectifier (SCR)