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Silicon Controlled Rectifier (SCR)

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Silicon Controlled Rectifier (SCR)
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Tape:YZPST-25TTS12   Phase Control SCR

DESCRIPTION/FEATURES

The 25TTS... High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to

125 °C junction temperature.


Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines.

This product has been designed and qualified for industrial level.


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PRODUCT SUMMARY

VT at 16 A

< 1.25  V

ITSM

300 A

VRRM

800/1200 V

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS

SINGLE-PHASE BRIDGE

THREE-PHASE BRIDGE

UNITS

Capacitive input filter T A  = 55 °C, T J  = 125 °C,

common heatsink of 1 °C/W

 18

 22

 A

 

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

TEST CONDITIONS

VALUES

UNITS

IT(AV)

Sinusoidal waveform

16

 

A

IRMS

 

25

VRRM/VDRM

 

800/1200

V

ITSM

 

300

A

VT

16 A, T J  = 25 °C 

1.25

V

dV/dt

 

500

V/µs

dI/dt

 

150

A/µs

TJ

 

- 40 to 125

°C

 

VOLTAGE RATINGS

 PART NUMBER

VRRM, MAXIMUM PEAK REVERSE VOLTAGE V

VDRM, MAXIMUM PEAK DIRECT VOLTAGE V

I RRM /I DRM AT 125  °C mA


25TTS08

800

800

 

10

25TTS12

1200

1200

High Power  Products  Phase Control SCR, 25 A

ABSOLUTE MAXIMUM RATINGS

 

PARAMETER

 

SYMBOL

 

TEST CONDITIONS

VALUES

 

UNITS

TYP.

MAX.

Maximum average on-state current

IT(AV)

T C  = 93 °C, 180° conduction half sine wave

16

 

A

Maximum RMS on-state current

IRMS

 

25

Maximum peak, one-cycle, non-repetitive surge current

 

ITSM

10 ms sine pulse, rated VRRM applied

300

10 ms sine pulse, no voltage reapplied

350

 

Maximum I²t for fusing

 

I²t

10 ms sine pulse, rated VRRM applied

450

 

A²s

10 ms sine pulse, no voltage reapplied

630

Maximum I²t for fusing

I²t

t = 0.1 to 10 ms, no voltage reapplied

6300

A²√s

Maximum on-state voltage drop

VTM

16 A, T J  = 25 °C

1.25

V

On-state slope resistance

Rt

 

T J  = 125 °C

12.0

m Ω

Threshold voltage

VT(TO)

1.0

V

 

Maximum reverse and direct leakage current

 

IRM/IDM

T J  = 25 °C

 

VR = Rated VRRM/VDRM

0.5

 

mA

T J  = 125 °C

10

Holding current

IH

Anode supply = 6 V, resistive load, initial IT = 1 A

-

100

Maximum latching current

IL

Anode supply = 6 V, resistive load

200

Maximum rate of rise of off-state voltage

DV/dt

 

500

V/µs

Maximum rate of rise of turned-on current

DI/dt

 

150

A/µs

 

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak gate power

PGM

 

8.0

 

W

Maximum average gate power

PG(AV)

 

2.0

Maximum peak positive gate current

+ IGM

 

1.5

A

Maximum peak negative gate voltage

- VGM

 

10

V

 

Maximum required DC gate current to trigger

 

IGT

Anode supply = 6 V, resistive load, TJ = - 10°C 

60

 

mA

Anode supply = 6 V, resistive load, TJ = 25°C 

45

Anode supply = 6 V, resistive load, TJ = 125°C 

20

 

Maximum required DC gate voltage to trigger

 

VGT

Anode supply = 6 V, resistive load, TJ = - 10°C 

2.5

 

V

Anode supply = 6 V, resistive load, TJ = 25 °C 

2.0

Anode supply = 6 V, resistive load, TJ = 125°C 

1.0

Maximum DC gate voltage not to trigger

VGD

 

TJ = 125 &#176;C, VDRM = Rated value

0.25

Maximum DC gate current not to trigger

IGD

2.0

mA

 

SWITCHING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Typical turn-on time

tgt

TJ = 25 °C

0.9

 

µs

Typical reverse recovery time

trr

 

TJ = 125 °C

4

Typical turn-off time

tq

110

 

Phase Contro l SCR, 25 A  High Power Products

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage temperature range

TJ, TStg

 

- 40 to 125

°C

Maximum thermal resistance, junction to case

 

RthJC

 

DC operation

 

1.1

 

 

°C/W

Maximum thermal resistance, junction to ambient

 

RthJA

 

 

62

Typical thermal resistance, case to heatsink

 

RthCS

 

Mounting surface, smooth and greased

 

0.5

 

Approximate weight

 

 

2

g

0.07

oz.

 

Mounting torque

minimum

 

 

6 (5)

kgf  ·  cm

(lbf  ·  in)

maximum

 

 

12 (10)

 

Marking device

 

 

Case style TO-220AB

25TTS08

25TTS12

ORDERING INFORMATION TA BLE

这里可以自定义设置

Main Feature  (Tj=25℃)


Symbol

Value

Unit

IT(AV)

7.5

A

VDRM   / VRRM

≥ 1000  

V

IGT

1 to15

mA


 Absolute ratings (Limiting Values)

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current (180° conduction angle)

12

A

IT(AV)

AV on-state current (180° conduction angle)

7.5

A

ITSM

Non repetitive surge peak on-state
       Current (tp=10ms)

 

100

 

A

I2t

(tp=10ms)

50

A2S

IGM

Peak gate current(tp=20us)

2

A

PGM

Peak gate power

5

W

PG(AV)

Average gate power

0.5

W

Tstg 

Tj

Storage temperature
Operating junction temperature

-40--+150
-40--+125


Thermai Resistances

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

1.3

K/W

Rth (j-a)

Junction to ambient

60

K/W


 Electrical characteristics( Tj=25 ℃ unless otherwise stated )

 

Symbol

 

Test Conditions

Value

 

Unit

Min

Type

Max




IGT

VD=6V, RL=100Ω

1

5

15

mA



VGT

VD=12V, RL=100Ω

-----

0.7

0.8

V



VGD

VD=VDRM, RL=3.3KΩ Tj=110℃

0.2

-----

-----

V



IH

IT=100mA   Gate Open

-----

9

20

mA



dV/dt

VD=67%VDRM, GateOpen,  Tj=125℃

50

125

 -----

v/μs



VTM

I T =16A,tp=380μs  

-----

-----

1.7

V



IDRM
IRRM

VD=VDRM
VR=VRRM

Tj=25℃ 

-----

-----

20

uA



Tj=110℃ 

-----

-----

300

uA



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