REVERSE CONDUCTING THYRISTORS
Features:
. Integrated freewheeling diode
. Optimized for low dynamic losses
Blocking - Off State
VRRM (1) | VDRM (1) | VRSM (1) |
2000 | 2000 | 2100 |
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse leakage and off state leakage | IRRM / IDRM | 10 mA 70 mA (3) |
Critical rate of voltage rise | dV/dt (4) | 1000V/ µsec |
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Average value of on-state current | IT(AV)M IF(AV)M |
| 360 223 |
| A | Sinewave,180° conduction,Tc=70 °C |
RMS value of on-state current | ITRMS |
| 566 351 |
| A | Nominal value |
Peak one cPSTCle surge (non repetitive) current | ITSM IFSM |
| 5000 3500 |
| A A | 10.0 msec (50Hz), sinusoidal wave- shape, 180° conduction, Tj = 125 °C |
I square t | I2t |
| 125x103 61x103 |
| A2s | 8.3 msec |
Latching current | IL |
| 500 |
| mA | VD = 24 V; RL= 12 ohms |
Holding current | IH |
| 100 |
| mA | VD = 24 V; I = 2.5 A |
Peak on-state voltage | VTM VFM |
| 2.61 3.42 |
| V | ITM = 1000 A |
Critical rate of rise of on-state current (5, 6) | Di/dt |
| - |
| A/ms | Switching from VDRM 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) | Di/dt |
| 400 |
| A/ms | Switching from VDRM 1000 V |
Gating
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Peak gate power dissipation | PGM |
| - |
| W | Tp = 40 us |
Average gate power dissipation | PG(AV) |
| 5 |
| W |
|
Peak gate current | IGM |
| 25 |
| A |
|
Gate current required to trigger all units | IGT |
| 400 |
| MA | VD = 10 V;IT=3A;Tj = +25 °C |
Gate voltage required to trigger all units | VGT |
| 2.5 |
|
V | VD = 10 V;IT=3A;Tj = +25 °C |
Peak negative voltage | VGRM |
| 2 |
| V |
Dynamic
Parameter | Symbol | Min. | Max. | Typ. | Units | |
Delay time | Tgd |
| 1.0 |
| ms | VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
Turn-on time | Tgt |
| - |
|
| |
Turn-off time (with VR = -5 V) | Tq |
| 40 | - | ms | ITM=4000A, tp=2000us, di/dt=60A/us, Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/us |
Reverse recovery current | Irm |
| - |
| A | ITM=4000A, tp=2000us, di/dt=60A/us |
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Operating temperature | Tj | -40 | +125 |
| °C |
|
Storage temperature | Tstg | -40 | +120 |
| °C |
|
Thermal resistance - junction to case | RQ(j-c) RQ(j-c)D |
| 55 |
| K/kW | Double sided cooled |
Thermal resistamce - case to sink | RQ(c-s) |
| 10 |
| K/kW | Double sided cooled * |
Mounting force | F | 8 | 12 | - | KN |
|
Weight | W |
|
| - | Kg |
Sym | A | B | C | D | H |
MM | 59 | 34 | 53 | 3.5×3 | 20±1 |
Copyright © 2019 Yangzhou Positioning Tech. Co., Ltd. | All Rights Reserved
Hello, please leave your name and email here before chat online so that we won't miss your message and contact you smoothly.
ONLINE CONSULTATION