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Reverse Conducting Thyristors(RCT)

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Reverse Conducting Thyristors(RCT)
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REVERSE CONDUCTING THYRISTORS

Features:

. Integrated freewheeling diode

. Optimized for low dynamic losses

 

Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

  2000

2000

2100


VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

10 mA 70 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000V/ µsec


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Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)M  IF(AV)M

 

360 223

 

A

Sinewave,180° conduction,Tc=70 °C

RMS value of on-state current

ITRMS

 

566 351

 

A

Nominal value

Peak one cPSTCle surge (non repetitive) current

ITSM 

IFSM

 

5000

3500

 

A

A

10.0 msec (50Hz), sinusoidal wave- shape, 180° conduction, Tj = 125 °C

I square t

I2t

 

125x103 61x103

 

A2s

8.3 msec

Latching current

IL

 

500

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

100

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM  VFM

 

2.61 3.42

 

V

ITM = 1000 A

Critical rate of rise of on-state current (5, 6)

Di/dt

 

-

 

A/ms

Switching from VDRM  1000 V, non-repetitive

Critical rate of rise of on-state current (6)

Di/dt

 

400

 

A/ms

Switching from VDRM  1000 V


Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

-

 

W

Tp = 40 us

Average gate power dissipation

PG(AV)

 

5

 

W

 

Peak gate current

IGM

 

25

 

A

 

Gate current required to trigger all units

IGT

 

400

 

MA

VD = 10 V;IT=3A;Tj = +25 °C

Gate voltage required to trigger all units

VGT

 

2.5

 

 

V

VD = 10 V;IT=3A;Tj = +25 °C

Peak negative voltage

VGRM

 

2

 

V


 

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units


Delay time

Tgd

 

1.0

 

ms

VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C

Turn-on time

Tgt

 

-

 

 

Turn-off time (with VR = -5 V)

Tq

 

40

-

ms

ITM=4000A, tp=2000us, di/dt=60A/us, Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/us

Reverse recovery current

Irm

 

-

 

A

ITM=4000A, tp=2000us, di/dt=60A/us

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

°C

 

Storage temperature

Tstg

-40

+120

 

°C

 

Thermal resistance - junction to case

RQ(j-c)

RQ(j-c)D

 

55
140
88
165

 

K/kW

Double sided cooled
Single sided cooled
Double sided cooled
Single sided cooled

Thermal resistamce - case to sink

RQ(c-s)

 

10
20

 

K/kW

Double sided cooled *
Single sided cooled *

Mounting force

F

8

12

-

KN

 

Weight

W

 

 

-

Kg


POWER THYRISTORT KP4000A 

Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data

A: 100 mm B: 150 mm C: 131 mm E: 36 mm

Sym

A

B

C

D

H

MM

59

34

53

3.5×3

20±1

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