Csutom Westcode Thyristor Supplier,Thyristor Catalog

Notes:

All ratings are specified for Tj=25 °C unless otherwise stated.
(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range -40 to +125 °C.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 °C.
(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 °C.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 F capacitor and 20 ohmsresistance in parallel with the thristor under test.

CONDUCTING - ON STATE

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	IT(AV)M IF(AV)M		360 223		A	Sinewave,180° conduction,Tc=70 °C
RMS value of on-state current	ITRMS		566 351		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	ITSM IFSM		5000 3500		A A	10.0 msec (50Hz), sinusoidal wave- shape, 180° conduction, Tj = 125 °C
I square t	I2t		125x103 61x103		A2s	8.3 msec
Latching current	IL		500		mA	VD = 24 V; RL= 12 ohms
Holding current	IH		100		mA	VD = 24 V; I = 2.5 A
Peak on-state voltage	VTM VFM		2.61 3.42		V	ITM = 1000 A
Critical rate of rise of on-state current (5, 6)	Di/dt		-		A/ms	Switching from VDRM 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	Di/dt		400		A/ms	Switching from VDRM 1000 V

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	PGM		-		W	Tp = 40 us
Average gate power dissipation	PG(AV)		5		W
Peak gate current	IGM		25		A
Gate current required to trigger all units	IGT		400		MA	VD = 10 V;IT=3A;Tj = +25 °C
Gate voltage required to trigger all units	VGT		2.5		V	VD = 10 V;IT=3A;Tj = +25 °C
Peak negative voltage	VGRM		2		V

Dynamic

Parameter	Symbol	Min.	Max.	Typ.	Units
Delay time	Tgd		1.0		ms	VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C
Turn-on time	Tgt		-
Turn-off time (with VR = -5 V)	Tq		40	-	ms	ITM=4000A, tp=2000us, di/dt=60A/us, Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/us
Reverse recovery current	Irm		-		A	ITM=4000A, tp=2000us, di/dt=60A/us

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	Tj	-40	+125		°C
Storage temperature	Tstg	-40	+120		°C
Thermal resistance - junction to case	R_Q(j-c) RQ(j-c)D		55 140 88 165		K/kW	Double sided cooled Single sided cooled Double sided cooled Single sided cooled
Thermal resistamce - case to sink	RQ(c-s)		10 20		K/kW	Double sided cooled * Single sided cooled *
Mounting force	F	8	12	-	KN
Weight	W			-	Kg

POWER THYRISTORT KP4000A

Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data

A: 100 mm B: 150 mm C: 131 mm E: 36 mm

Sym	A	B	C	D	H
MM	59	34	53	3.5×3	20±1

VRRM (1)	VDRM (1)	VRSM (1)
2000	2000	2100

Repetitive peak reverse leakage and off state leakage	IRRM / IDRM	10 mA 70 mA (3)
Critical rate of voltage rise	dV/dt (4)	1000V/ µsec

Reverse Conducting Thyristors(RCT)