Fast thyristor fr1000ax50 fast switching reverse-conducting thyristor rct

Fast Switching Reverse-conducting Thyristor

Features:

. All Diffused Structure

. Interdigitated Amplifying Gate Configuration

. Blocking capabilty up to 2500 volts

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

Repetitive peak off state leakage

I_DRM

20 mA

80mA (3)

Critical rate of voltage rise

dV/dt (4)

700 V/msec

Device Type	VDRM (1)	VDSM (1)
FR1000AX50	2500	2500

INQUIRE PRODUCT DOWNLOAD

Conducting - on state

Parameter	Symbol		Max.	Typ.	Units	Conditions
RMS value of on-state current	I_TRMS		1550		A	Nominal value
Average on-state current	I_T(AV)		1000		A	Continuous single-phase,half sine wave,180°conduction
Peak one cycle surge (non repetitive) current	I_TSM		14000		A	8.3 msec (60Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		8.2.x10⁵		A²s	8.3 msec and 10.0 msec
RNS reverse currrnt	I_R(RMS)		630		A
Average reverse current	I_R(AV)		400		A	Continuous single-phase,half sine wave,180°conduction
Peak on-state voltage	V_TM	Conducting - on state	2.2		V	I_TM=1000A T_j = 125 ^oC
Peak reverse voltage	V_RM		4.0		V	I_RM=1200A, T_j = 125 ^oC
Critical rate of rise of on-state current	di/dt		300		A/ms	V_D=1/2V_DRM,I_TM=800A f=60H_ZI_GM=1.5A,di_G/dt=1.0A/us,Tj=125℃
Critical rate of decrease of reverse conmmutating current	(di/dt)_C		200		A/ms	I_TM=4000A,tw=60us,I_RM=4000A,dv/dt=700V/us,V_DM=1/2V_DRN,Tj=125℃,Saturable reactor7500v.us

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		30		W	t_p= 40 us
Average gate power dissipation	P_G(AV)		8		W
Peak gate current	I_GM		10		A
Gate current required to trigger all units	I_GT		350		mA	V_D = 6 V;R_L = 2 ohms;T_j = +25 ^oC
Gate voltage required to trigger all units	V_GT		4		V	V_D = 6 V;R_L = 2 ohms;T_j = 25^oC
Peak non- trigger voltage	V_GD		0.2		V	T_j = 125 ^oC;V_D=1/2V_DRM

Dynamic

Parameter

Symbol

Max.

Typ.

Units

Conditions

Turn-off time

t_q

I_TM =4000 A; di₁/dt = -200A/ms;

di₂/dt=50A/us,I_RM=500A; dV/dt =700 V/ms V_DR=1250V

T_j = 125 ^oC;tw=60us

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	T_j	-40	+125		^oC
Storage temperature	T_stg	-40	+150		^oC
Thyristor part thermal resistance - junction to fin	R_Q_Ⅰ_(j-f)		0.022		^oC/W	Double sided cooled
Diode part thermal resistamce – junction to fin	R_Q_Ⅲ_(j-f)		0.070		^oC/W	Double sided cooled
Mounting force	P		45		kN
Weight	W		670		g