PRODUCT

Features 3A peak pulse current (tp=8/20μs) Transient protection for high speed data lines to IEC 61000-4-2 (ESD) ±15KV (Air), ±8KV (Contact) Working voltage : 5V Protect four I/O lines Low capacitance : 0.8pF (typical any I/O pin to Ground ) Fast turn-on and low clamping voltage Solid-state silicon-avalanche and active circuit triggering technology

Features 4A peak pulse current (tp=8/20μs) Transient protection for high speed data lines to IEC 61000-4-2 (ESD) ±15KV (Air), ±8KV (Contact Working voltage : 5V Protect four I/O lines Low capacitance : 0.9pF (typical any I/O pin to Ground ) Fast turn-on and low clamping voltage Solid-state silicon-avalanche and active circuit triggering technology

Features Small SOD-323 package Protects one data or power line Operating Voltage: 4.5V High peak pulse current capability Ultra low clamping voltage Complies with following standards: IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV IEC61000-4-5 (Lightning) 130A (8/20μs) RoHS Compliant

Features ESD/Surge protection for one line with bi-direction Small SOD-323 package Protects one data or power line For operating voltage of 3.3V and below High peak pulse current capability Fast turn-on and Ultra low clamping voltage Complies with following standards: IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV IEC61000-4-5 (Lightning) 150A (8/20μs) RoHS Compliant

Features: . All Diffused Structure . Center Amplifying Gate Configuration . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device

Features: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 2100 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device

Features: . All Diffused Structure . Center Amplifying Gate Configuration . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device

Features: . All Diffused Structure . Linear Amplifying Gate Configuration . Blocking capabilty up to 1600 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device

Phase Control Thyristors Features ● Center amplifying gate configuration ● Compression bonded encapsulation ● High dV/dt Capability ● Stud type, thread inch or metric

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