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Pressure assembled device high power thyristor wholesale
YZPST-R3708FC45V
Features: . All Diffused Structure . Center Amplifying Gate Configuration . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device
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HIGH POWER THYRISTOR FOR INVERTER AND CHOPPER APPLICATIONS

YZPST-R3708FC45V

Features:

. All Diffused Structure

. Center Amplifying Gate Configuration                  

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

4500

4500

4600

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

20 mA

200mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/msec



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Conducting - on state

 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)M


3708


A

Sine. 180o  conduction  

Tc = 55 oC

RMS value of on-state current

ITRMS


7364


A

Nominal value

Peak one cpstcle surge

(non repetitive) current

ITSM


50


kA

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction,

Tj = 125 oC

I square t

I2t


12.5×103


kA2s

Latching current

IL


1500


mA

VD = 24 V; RL= 12 ohms

Holding current

IH


1000


mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM


2,10


V

ITM = 4000 A; Tvj=125

Threshold voltage

VT(T0)


1.473


V

Tj = 125 oC

On-state slope resistance

rT


0.156


Ω

Tj = 125 oC

Critical rate of rise of on-state

current (5, 6)

di/dt


1000


A/ms

Switching from 75%VDRM,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt


500


A/ms

Switching from 75%VDRM

 

ELECTRICAL CHARACTERISTICS AND RATINGS (cont’d)

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM


50


W

tp = 100 us

Average gate power dissipation

PG(AV)


4


W


Peak gate current

IGM


-


A


Gate current required to trigger all units

IGT


-

600

-


mA

mA

mA

VD = 5 V;RL = 3 ohms;Tj = -40 oC

VD = 5 V;RL = 3 ohms;Tj = +25 oC

VD = 5 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT


-

3.0

-


V

V

V

VD = 5 V;RL = 3 ohms;Tj = -40 oC

VD = 5 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM


5


V


 

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td



-

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq


150

-

ms

ITM =4000 A; di/dt = 60 A/ms;

VR ³ 100V; Re-applied dV/dt = 20 V/ms linear to 67% VDRM; VG = 0;

Tj = 125 oC; Duty cpstcle ³ 0.01%

Reverse recovery charge

Qrr


8800


mAs

ITM = 4000 A; di/dt = 60 A/ms;

VR ³ 100 V

* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125


oC


Storage temperature

Tstg

-40

+150


oC


Thermal resistance - junction to case

RQ (j-c)


0.0065

-


K /W

Double sided cooled

Single sided cooled

Thermal resistamce - case to heatsink

RQ (c-s)


0.0130

-


K /W

Double sided cooled *

Single sided cooled *

Thermal resistance - junction to heatsink

RQ (j-s)


-

-


K/kW

Double sided cooled

Single sided cooled

Mounting force

P

81

99

-

kN


Weight

W

-

-

2800

g

About

* Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data 

CASE OUTLINE AND DIMENSIONS.

  

Sym

A

B

C

D

H

mm

142

100

110

3.5×3

36±1

 

 

 

 

 


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