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Power thyristors 5200v bv certificated thyristor driver

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Power thyristors 5200v bv certificated thyristor driver
YZPST-5STP34N5200
Features: . All Diffused Structure . Center Amplifying Gate Configuration . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device
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HIGH POWER THYRISTOR FOR PHASE CONTROL

YZPST-5STP34N5200




Features:

. All Diffused Structure

. Center Amplifying Gate Configuration                 

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

Blocking - Off State                   

VRRM (1)

VDRM (1)

VRSM (1)

5200

5200

5300

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

30 mA

95mA (3)

Critical rate of voltage rise

dV/dt (4)

2000 V/msec



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Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. Average value of on-state current

IT(AV)M


3600


A

Sinewave,180o conduction TC = 70 oC

RMS value of on-state current

ITRMS


5850


A

Nominal value

Peak one cpstcle surge

(non repetitive) current

ITSM


63


kA

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t


19.8×103


kA2s

Latching current

IL


500


mA

VD = 24 V; RL= 12 ohms

Holding current

IH


125


mA

VD = 24 V; I =2.5 A

Peak on-state voltage

VTM


1.54


V

ITM =3000 A; Tvj=125

Threshold voltage

VTO


1.03


V

Tvj=125

Slope resistance

Rt


0.16


mΩ

Tvj=125

Critical rate of rise of on-state

current (5, 6)

di/dt


1000


A/ms

Switching from VDRM £ 1500 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt


200


A/ms

Switching from VDRM £ 1500 V

ELECTRICAL CHARACTERISTICS AND RATINGS (cont`d)

Gating


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM


-


W

t= 40 us

Average gate power dissipation

PG(AV)


7


W


Peak gate current

IGM


10


A


Gate current required to trigger all units

IGT


-

400

-


mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT


-

2.6

-


V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM


10


V



Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td


-


ms

ITM =50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq


700


ms

ITM = 2000 A; di/dt = 1.5 A/ms;

VR ³200 V; Re-applied dV/dt = 20 V/ms linear to 67% VDRM; VG = 0;

Tj = 125 oC; Duty cpstcle ³ 0.01%

Reverse recovery charge

Qrr


5200


mAs

ITM = 2000 A; di/dt = 1.5 A/ms;

VR ³200 V

* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125


oC


Storage temperature

Tstg

-40

+140


oC


Thermal resistance - junction to case

RQ (j-c)


5.7

11.4


K/kW

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)


1

2


K/kW

Double sided cooled *

Single sided cooled *

Thermal resistance - junction to heatsink

RQ (j-s)


-

-


K/kW

Double sided cooled *

Single sided cooled *

Mounting force

P

81

108

-

kN


Weight

W

-

-

2.9

Kg


* Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data

THYRISTOR 5STP34N52 (3)



Sym

A

B

C

D

H

mm

150

100

108

3.5×3

35±1






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