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Positioning good quality capsule thyristor factory price for audio amplifier

Positioning good quality capsule thyristor factory price for audio amplifier

Positioning good quality capsule thyristor factory price for audio amplifier

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Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average   value of on-state current

IT(AV)


300


A

Sinewave,180o   conduction,Tc=65oC

RMS   value of on-state current

ITRMS


480


A

Nominal   value

Peak   one cycle surge

(non   repetitive) current

 

ITSM


4200

 

4400


A

 

A

8.3   msec (60Hz), sinusoidal wave-

shape,   180o conduction, Tj = 125 oC

10.0   msec (50Hz), sinusoidal wave-

shape,   180o conduction, Tj = 125 oC

I   square t

I2t


68000


A2s

8.3   msec

Latching   current

IL



300

mA

VD   = 24 V; RL= 12 ohms

Holding   current

IH



200

mA

VD   = 24 V; I = 2.5 A

Peak   on-state voltage

VTM


2.98


V

ITM   = 1500 A; Tj = 25 oC

Critical   rate of rise of on-state

current   (5, 6)

di/dt


300


A/ms

Switching   from VDRM £ 1000 V,

non-repetitive

Critical   rate of rise of on-state

current   (6)

di/dt


150


A/ms

Switching   from VDRM £ 1000 V

ELECTRICAL CHARACTERISTICS AND RATINGS (cont’d)     

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak   gate power dissipation

PGM


10


W

tp   = 40 us

Average   gate power dissipation

PG(AV)


2


W


Peak   gate current

IGM


3


A


Gate   current required to trigger all units

IGT


200

150

125


mA

mA

mA

VD   = 6 V;RL = 3 ohms;Tj = -40 oC

VD   = 6 V;RL = 3 ohms;Tj = +25 oC

VD   = 6 V;RL = 3 ohms;Tj = +125oC

Gate   voltage required to trigger all units

 

 

VGT

 

 

0.30

3

2.5

 


V

V

V

VD   = 6 V;RL = 3 ohms;Tj = -40 oC

VD   = 6 V;RL = 3 ohms;Tj = 0-125oC

VD   = Rated VDRM; RL = 1000 ohms;

Tj   = + 125 oC

Peak   negative voltage

VGRM


5


V


Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay   time

td


1.0


ms

ITM   = 100 A; VD   =  VDRM

Gate   pulse: VG = 10 V; RG = 25 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off   time (with VR = -50 V)

tq


200

 


ms

ITM   > 250 A;   di/dt = 10 A/ms;

VR   ³   -50 V; Re-applied dV/dt = 20 V/ms linear to VDRM   ;

Tj   = 125 oC; Duty cycle ³ 0.01%

Reverse   recovery charge

Qrrr


200


mCb

ITM   > 400 A;   di/dt = 10 A/ms;

  THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating   temperature

Tj

-40

+125


oC


Storage   temperature

Tstg

-40

+150


oC


Thermal   resistance - junction to case

RQ (j-c)


0.095


oC/W

Double   sided cooled

Thermal   resistamce - case to sink

RQ (c-s)


0.06


oC/W

Double   sided cooled *

Mounting   force

P

3.2

3.9


kN


Weight

W



57

g.


       * Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data                                                    

CASE OUTLINE AND DIMENSIONS.   

Positioning good quality capsule thyristor factory price for audio amplifier-1


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