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Plastic-encapsulate silicon transistor high transition frequency bfr93a

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Plastic-encapsulate silicon transistor high transition frequency bfr93a
YZPST-BFR93A
Features 1. High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb`Cc and high gain.(Typ.4ps) 3. Small NF. 4. We declare that the material of product compliance with RoHS requirements.
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Plastic-Encapsulate Transistors

YZPST-BFR93A   

Features

1. High transition frequency.(Typ.fT=1.5GHz)

2.Small rbb`Cc and high gain.(Typ.4ps)

3. Small NF.

4. We declare that the material of product compliance with RoHS requirements.

MAXIMUM RATINGS (T= 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

20

V

Collector-Emitter Voltage

VCEO

11

V

Emitter-base voltage

VEBO

3

V

Collector Current

IC

50

mA

Collector power dissipation

PC

0.2

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-55~+150

°C



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High transition frequency BFR93A Plastic-Encapsulate Transistors


ELECTRICAL CHARACTERISTICS(
T= 25°C)

Parameter

Symbol

Min.

Typ

Max.

Unit

Conditions

Collector-base breakdown voltage

BVCBO

20

-

-

V

IC=10mA

Collector-emitter breakdown voltage

BVCEO

11

-

-

V

IC=1mA

Emitter-base breakdown voltage

BVEBO

3

-

-

V

IE=10mA

Collector cutoff current

ICBO

-

-

0.5

mA

VCB=10V

Emitter cutoff current

IEBO

-

-

0.5

mA

VEB=2V

Collector-emitter saturation voltage

VCE(sat)

-

-

0.5

V

IC/IB=10mA/5mA

DC current transfer ratio

hFE

56

-

120

-

VCE/IC=10V/5mA

Transition frequency

fT

1.4

3.2

-

GHz

VCE=10V, IE=-10mA, f=500MHz

Output capacitance

Cob

-

0.8

1.5

pF

VCB=10V, IE=0A, f=1MHz

Collector-base time constant

rbb`Cc

-

4

12

ps

VCB=10V, IC=10mA, f=31.8MHz

Noise factor

NF

-

3.5

-

dB

VCE=6V, IC=2mA, f=500MHz,Rg=50W






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