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Npn-pnp Transistor

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Npn-pnp Transistor
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Features

■ Complementary NPN - PNP transistors

■ Monolithic Darlington configuration


Applications

■ Audio power amplifier

■ DC-AC converter

■ Low voltage DC motor drive

■ General purpose switching applications


Description

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.


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FIGURE 1. INTERNAL SCHEMATIC DIAGRAMS

TABLE 1. DEVICE SUMMARY

Order code

Marking

Package

Packaging

2SDW100

2SDW100

 

TO-247

 

Tube

2SDW200

2SDW200

ABSOLUTE MAXIMUN RATINGS

Table 2. Absolute maximum ratings

 

 

Symbol

 

 

Parameter

Value

 

 

Unit

NPN

2SDW100

PNP

2SDW200

VCBO

Collector-emitter voltage (IE = 0)

80

V

VCEO

Collector-emitter voltage (IB = 0)

80

V

IC

Collector current

25

A

ICM

Collector peak current (tP < 5 ms)

40

A

IB

Base current

6

A

IBM

Base peak current (tP < 5 ms)

10

A

PTOT

Total dissipation at Tc ≤ 25 °C

130

W

TSTG

Storage temperature

-65 to 150

°C

TJ

Max. operating junction temperature

150

°C

Note: For PNP type voltage and current values are negative

 

Table 3. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case max

0.96

°C/W

 

Electrical characteristics

 

Tcase = 25 °C; unless otherwise specified.

Table 4.Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current (IE = 0)

VCE = 80 V

 

 

 0.5

 MA

ICEV

Collector cut-off current (VBE = - 0.3 V)

VCE = 80 V

 

 

 0.1

 MA

ICEO

Collector cut-off current (IB = 0)

VCE = 60 V

 

 

 0.5

 MA

IEBO

Emitter cut-off current (IC = 0)

VEB = 5 V

 

 

 2

 MA

VCEO(sus) (1)

Collector-emitter sustaining voltage (IB = 0)

IC = 50 mA

 80

 

 

 V

 

VCE(sat)(1)

 

Collector-emitter saturation voltage

IC = 5 A  IB = 20 mA

IC = 10 A  IB = 40 mA

IC = 20 A  IB = 80 mA

 

 

1.2
1.75
3.5

V V V

 

VBE(sat)(1)

Base-emitter saturation voltage

IC = 20 A I B  = 80 mA

 

 

3.3

 V

V BE (1)

Base-emitter voltage

IC = 10A  VCE = 3 V

1

 

3

V

 

HFE(1)

 

DC current gain

IC = 5A  VCE = 3 V

IC = 10A  VCE = 3 V

IC = 20A  VCE = 3 V

600
500
300

 

15000
12000
6000

 

VF(1)

Diode forward voltage

IF = 10 A

 

TBD

 

V

 Is/b

Second breakdown current

VCE = 25 V   t = 500 ms

 

TBD

 

 A

1.   Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.

For PNP type voltage and current values are negative.


TO-247 Mechanical data

 

Dim.

MM.

Min.

Typ

Max.

A

4.85

 

5.15

A1

2.20

 

2.60

B

1.0

 

1.40

B1

2.0

 

2.40

B2

3.0

 

3.40

C

0.40

 

0.80

D

19.85

 

20.15

E

15.45

 

15.75

E

 

5.45

 

L

14.20

 

14.80

L1

3.70

 

4.30

L2

 

18.50

 

øP

3.55

 

3.65

øR

4.50

 

5.50

S

 

5.50


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