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Metal Encapsulated Micro Transistor

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Metal Encapsulated Micro Transistor
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Tape:YZPST-2N6576   NPN Silicon Power Darlington Transistors


1.High Gain Darlington Performance

2. Built-in Diode Protection for ReversePolarity Protection

3. Can Be Driven from Low-Level Logic

4. Popular Voltage Range


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ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

Total Dissipation atParameter

Symbol

Value

Unit

Collector-Base Voltage 

V CBO

60

V

Collector-Emitter Voltage

V CBO

60

V

Emitter-Base Voltage 

V EBO

6.0

A

Collector Current

IC

15

A

Base Current

IB

0.5

W

Total Dissipation at

Ptot

120

 Max. Operating Junction Temperature 

Tj

 120

Storage Temperature 

Tstg

 -55~150

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Parameter

Symbol

Test  Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

I CEO

V CE = 60V, I B = 0 

600

 

 1.0

V

 Collector Cut-off Current

I CEO

 V CB = 60V, I E = 0

 —

 —

0.5

uA

 Emitter Cut-off Current

I EBO

 V EB = 5.0V, I C = 0

 —

 —

 2.0

uA

Collector-Emitter Sustaining Voltage 

V CEO

I C = 30mA, I B = 0

60

 —

uA

DC Current Gain

h FE(1) 

h FE(2)

V CE = 3.0V, I C = 4.0A

V CE = 3.0V, I C = 10A 

2000

500

 

V

 

Collector-Emitter Saturation Voltage

V CE(sat)

I C = 10A, I B = 100mA 

I C = 15A, I B = 150mA 

 —

 3.7

2.5

4.0

W

Base-Emitter Saturation Voltage

V BE(sat)

I C = 10A, I B = 100mA

 —

 —

3.5

 V


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