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Inverter Capsule Thyristors

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Inverter Capsule Thyristors
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Features:

. All Diffused Structure

. Spoke Amplifying Gate Configuration

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

 

Blocking - Off State

Device Type

VRRM (1)

VDRM(1)

VRSM (1)

PSTR1275NS20

2000

2000

2100


VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

10 mA 65mA (3)

Critical rate of voltage rise

dV/dt (4)

600V/ µsec


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Notes:

All ratings are specified for Tj=25 °C unless otherwise stated.
(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range  -40 to +125 °C.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 °C.
(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 °C.
(5) Non-repetitive value.

 CONDUCTING - ON STATE 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

1275

 

A

Tc=55 °C

RMS value of on-state current

ITRMS

 

1870

 

A

Nominal value

Peak one cPSTCle surge  (non repetitive) current

 

ITSM

 

21400
18900

 

A

A

8.3 msec (60Hz), sinusoidal wave-shape, 180° conduction, Tj = 125 °C 10.0 msec (50Hz), sinusoidal wave- shape, 180° conduction, Tj = 125 °C

I square t

I²t

 

2.66x106

 

A²s

8.3 msec and 10.0 msec

Latching current

IL

 

1000

 

MA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

500

 

MA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

1.90

 

V

ITM = 2000 A; Duty cPSTCle  0.01%

Critical rate of rise of on-state current (5, 6)

Di/dt

 

1000

 

A/ms

Switching from VDRM  1000 V, non-repetitive


Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

200

 

W

Tp = 40 us

Average gate power dissipation

PG(AV)

 

5

 

W

 

Peak gate current

IGM

 

10

 

A

 

Gate current required to trigger all units

IGT

 

300
150
125

 

MA
MA
MA

VD = 6 V;RL = 3 ohms;Tj = -40 °C
VD = 6 V;RL = 3 ohms;Tj = +25 °C
VD = 6 V;RL = 3 ohms;Tj = +125 °C

Gate voltage required to trigger all units

 

VGT

 0.30

5
3

 

V
V
V

VD = 6 V;RL = 3 ohms;Tj = -40 °C
VD = 6 V;RL = 3 ohms;Tj = 0-125 °C
VD = Rated VDRM; RL = 1000 ohms;
Tj = + 125 °C

Peak negative voltage

VGRM

 

5

 

V


 

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

Td

 

    1.5

0.7

ms

ITM = 500 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 s; tp = 20 s

Turn-off time (with VR = -50 V)

Tq

 

    40

 

ms

ITM = 1000 A; di/dt = 25 A/s; 

VR  -50 V; Re-applied dV/dt = 200 V/s linear to 80% VDRM; VG = 0;

Tj = 125 °C; Duty cPSTCle  0.01%

Reverse recovery charge

Qrr

 

      *

2000

mC

ITM = 1000 A; di/dt = 25 A/s; 

VR-50 V

 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

°C

 

Storage temperature

Tstg

-40

+150

 

°C

 

Thermal resistance - junction to case

RQ(j-c)

 

0.023
0.046

 

°C/W

Double sided cooled
Single sided cooled

Thermal resistamce - case to sink

RQ(j-c)

 

0.010
0.020

 

°C/W

Double sided cooled *
Single sided cooled *

Mounting force

P

19.5

21

 

kN


CASE OUTLINE AND DIMENSIONS

Sym

A

B

E

Inches

1.85

2.91

1.02

mm

47

74max

26±1.0

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