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High voltage scr thyristor 6500V type scr thyristor

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High voltage scr thyristor 6500V type scr thyristor
YZPST- DCR1020SF65
HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
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Features:

. All Diffused Structure

. Center  Amplifying Gate Configuration

. Blocking capabilty up to 6500 volts

. Guaranteed Maximum Turn-Off Time

. High dV/dt  Capability

. Pressure Assembled Device


Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

  6500

6500

6600

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

25 mA150 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000V/ µsec


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HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS

Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied

     50Hz/60zHz  sinusoidal waveform over the temperature  range    -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. 

     Gate open. Tj = 125   C.

 

 

(5) Non-repetitive  value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section

5-2-2-6. The value defined would be in addi- tion to that obtained from a snubber circuit, comprising a 0.2   F capacitor and 20 ohms resistance in parallel with the thristor under test.

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

 

IT(AV)


 

640


 

A

Sinewave,180o

conduction,T =60oC

c

RMS value of on-state current

ITRMS


1005


A

Nominal value

 

 

 

Peak one cPSTCle surge

(non repetitive) current

 

 

 

 

ITSM


 

 

-

 

8.5


 

 

KA KA

8.3 msec (60Hz), sinusoidal wave- shape, 180o  conduction, T = 125

j

oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o  conduction, T = 125

j

oC

I square t

I2t


0.36x106


A2s

8.3 msec and 10.0 msec

Latching current

IL


600


mA

VD  = 24 V; RL= 12 ohms

Holding current

IH


200


mA

VD = 24 V; I = 2.5 A

 

Peak on-state voltage

 

VTM


 

3.6


 

V

ITM  = 1800 A; Duty cPSTCle

0.01%; T = 25 oC

j

Critical rate of rise of on-state current (5, 6)

 

di/dt


 

-


 

A/    s

Switching from VDRM     1000 V, non-repetitive

Critical rate of rise of on-state current (6)

 

di/dt


 

100


 

A/    s

 

Switching from VDRM     1000 V

ELECTRICAL  CHARACTERISTICS AND RATINGS

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM


150


W

tp = 40 us

 

Average gate power dissipation

 

PG(AV)


 

5


 

W


Peak gate current

IGM


-


A


 

Gate current required to trigger all units

 

IGT


-

300

-


mA mA mA

V   = 6 V;R  = 3 ohms;T  = -40 oC

D                        L                                    j

V   = 6 V;R  = 3 ohms;T  = +25 oC

D                        L                                    j

V   = 6 V;R  = 3 ohms;T  = +125oC

D                        L                                    j

Gate voltage required to trigger all units

 

 

V


-

3.0

-


 

V V V

V   = 6 V;R  = 3 ohms;T  = -40 oC

D                        L                                    j

V   = 6 V;R  = 3 ohms;T  = 0-125oC

D                        L                                    j

VD  = Rated VDRM; RL = 1000 ohms;

T = + 125 oC

j

 

Peak negative voltage

 

VGRM


 

5


 

V


Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

 

Delay time

 

td


 

-

 

0.5

 

s

ITM  = 50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG  = 20 ohms; tr = 0.1   s; tp = 20   s

 

 

Turn-off time (with VR  = -50 V)

 

 

tq


 

 

-

 

 

600

 

 

s

ITM  = 1000 A; di/dt = 25 A/  s;

VR        -50 V; Re-applied dV/dt = 20

V/    s linear to 80% VDRM; VG = 0;

T = 125 oC; Duty cPSTCle

j

0.01%

 

Reverse recovery charge

 

Qrr


 

*


 

C

ITM  = 1000 A; di/dt = 25 A/  s; VR        -50 V

* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS                                                    

 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125


oC


 

Storage temperature

 

Tstg

 

-40

 

+125


 

oC


 

Thermal resistance - junction to case

 

R  (j-c)


0.022

0.052


o

C/W

Double sided cooled

Single sided cooled

 

Thermal resistamce - case to sink

 

R  (c-s)


0.004

0.008


o

C/W

Double sided cooled * Single sided cooled *

 

Thermal resistamce - junction to sink

 

R  (j-s)


-

-


o

C/W

Double sided cooled * Single sided cooled *

Mounting force

P

18

22


kN


Weight

W



-

g


* Mounting surfaces smooth, flat and greased

CASE OUTLINE AND DIMENSIONS

Sym

A

B

C

D

H

mm

75

47

66

3.5×3

26±1


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