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High power thyristors for inverter applications all diffused structure supplier

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High power thyristors for inverter applications all diffused structure supplier
YZPST-R0929LC10 (TQ<10US)
HIGH POWER THYRISTOR FOR INVERTER APPLICATIONS YZPST-R0929LC10 (TQ<10US) Thyristor Features: . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device
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HIGH POWER THYRISTOR FOR INVERTER APPLICATIONS

YZPST-R0929LC10 (TQ<10US)

Thyristor Features:  

. All Diffused Structure

. Interdigitated Amplifying Gate Configuration

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

1000

1100

1200


VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)


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Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied

      50Hz/60zHz sinusoidal waveform over the

      temperature range  -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 mF capacitor and 20 ohmsresistance in parallel with the thristor under test.

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

15 mA

70 mA (3)

Critical rate of voltage rise

dV/dt (4)

200 V/msec

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. average value of on-state current

IT(AV)M


929


A

Sinewave,180o conduction,Tc=55oC

RMS value of on-state current

IT(RMS)m


1893


A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

 

ITSM


-

   

9.0


kA

 

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t


405x103


A2s

8.3 msec

Latching current

IL


-


mA

VD = 24 V; RL= 12 ohms

Holding current

IH


1000


mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM


2.04


V

ITM = 1400 A

Critical rate of rise of on-state

current (5, 6)

di/dt


1500


A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt


1000


A/ms

Switching from VDRM £ 1000 V

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM


30


W


Average gate power dissipation

PG(AV)


2


W


Peak gate current

IGM


-


A


Gate current required to trigger all units

IGT


300


mA

VD = 10 V;IT=3A;Tj = +25 oC

 

Gate voltage required to trigger all units

 

 

VGT


3.0


V

 

VD = 10 V;IT=3A;Tj = +25 oC

 

Peak negative voltage

VRGM


5


V


Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

tgd


1.0

-

ms

VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C

Turn-on time

tgt


2.0

-


Turn-off time (with VR = -5 V)

tq

-

10

-

ms

ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/us

Reverse recovery current

Irm


-


A

ITM=4000A, tp=2000us, di/dt=60A/us

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125


oC


Storage temperature

Tstg

-40

+150


oC


Thermal resistance - junction to case

RQ (j-c)


-

-


K/kW

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)


-

-


K/kW

Double sided cooled *

Single sided cooled *

Thermal resistance - junction to case

RQ (j-s)


32

64


K/kW

Double sided cooled

Single sided cooled

Mounting force

F

10

20

-

kN


Weight

W



-

Kg

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YZPST-R0929LC10-1



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