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High power thyristor for phase control applications 1600V

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High power thyristor for phase control applications 1600V
YZPST-KP4350A1600V
Features: . All Diffused Structure . Linear Amplifying Gate Configuration . Blocking capabilty up to 1600 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device
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High power thyristor for phase control applications

 YZPST-KP4350A1600V


Features: 

. All Diffused Structure

. Linear Amplifying Gate Configuration                           

. Blocking capabilty up to 1600 volts

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device


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 ELECTRICAL CHARACTERISTICS AND RATINGS

 

Blocking - Off State

Device Type

VRRM (1)

VDRM (1)

VRSM (1)

KP4350A

  1600

  1600

  1700

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

 

 

450 mA (3)

Critical rate of voltage rise

dV/dt (4)

300 V/msec


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)


  4350


A

Sinewave,180o conduction,TS=70oC

Peak one cpstcle surge

(non repetitive) current

 

ITSM


48900

  


A

 

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t


11.9x106


A2s

10.0 msec

Latching current

IL


     1000


mA

VD = 12 V; RL= 12 ohms

Holding current

IH


     450


mA

VD = 12 V; I = 2.5 A

Peak on-state voltage

VTM


     1.5


V

ITM = 6000 A; Duty cpstcle £ 0.01%

Tj = 25 oC

Critical rate of rise of on-state

current (5)

di/dt


      200


A/ms

Switching from VDRM £ 1000 V,

non-repetitive


Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM


200


W

t= 40 us

Average gate power dissipation

PG(AV)


5


W


Peak gate current

IGM


15


A


Gate current required to trigger all units

IGT

 

30

300

200

125


mA

mA

mA

VD = 12 V;RL = 6 ohms;Tj = -40 oC

VD = 12 V;RL = 6 ohms;Tj = +25 oC

VD = 12 V;RL = 6 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT

 

 

0.30

5

3

 


V

V

V

VD = 12 V;RL = 6 ohms;Tj = -40 oC

VD = 12 V;RL = 6 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM


15


V




CASE OUTLINE AND DIMENSIONS.

YZPST-KP4350A1600V




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