Custom Varicap Diode Manufacturer, High Power Diode

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High Frequency High Voltage Diode CL03-08

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Characteristics

1. High junction temperature up to130℃

2. Low forward voltage drop, and small current leakage

3. Avalanche breakdown protection

4. Max reverse recovery time to 40nS

4. Excellent properties against HV surge impact

5. Axial leading wires which are weldable

6. Epoxy package with anti-corrosion properties on surface

Application

• Rectification for microwave oven

• Industrial microwave power supplies

• HF X ray source

• Laser power supply

• Voltage multiplying circuits

• Rectification of power supplies for other electronic devices

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Main Specification

(Tamb=25 oC, unless otherwise specified) For high voltage rectification

No.	Item	Symbol	Unit	Rating	Conditions
1	Repetitive Peak Reverse Voltage	VRRM	KV	8
2	Average Forward Current	IF (AV)	mA	300	Tamb=60 °C 50HZ Sine-half Wave Rectification Average Value
3	Forward Surge Current	IFSM	A	15	Tamb=25 °C 50HZ Sine-half Wave,One Shot
4	Reverse Surge Current	IRSM	μA	-	Pulse width 1ms triangle wave single pulse
5	Maximum Junction Temperature	Tjmax	°C	130
6	Storage Temperature	Tstg	°C	-40~+130

Electric Specification

NO.	Item	Symbol	Unit	Rating	Test conditions
1	Forward Voltage Drop	VFM	V	15max	IFM=300mA
2	Normal Temperature Reverse Current	IRM1	μA	5max	VRM=8KV
3	High Temperature Reverse Current	IRM2	μA	5max	Tamb=100°C VRM=10KV
4	Reverse Breakdown Voltage	VZ	KV	8	IR=300mA
5	Reverse Recovery Time	trr	nS	100	IF=2mA, IRM=4mA 90%