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High Frequency High Voltage Diode CL03-08

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High Frequency High Voltage Diode CL03-08
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Characteristics

1. High junction temperature up to130℃

2. Low forward voltage drop, and small current leakage

3. Avalanche breakdown protection 

4. Max reverse recovery time to 40nS

4. Excellent properties against HV surge impact

5. Axial leading wires which are weldable

6. Epoxy package with anti-corrosion properties on surface

Application

• Rectification for microwave oven

• Industrial microwave power supplies

• HF X ray source

• Laser power supply

• Voltage multiplying circuits

• Rectification of power supplies for other electronic devices


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Main Specification

(Tamb=25 oC, unless otherwise specified) For high voltage rectification

No.

Item

Symbol

Unit

 Rating

Conditions

1

Repetitive Peak Reverse Voltage

VRRM

 KV

8

 

2

Average Forward Current

 

  IF (AV)

 

mA

 

300

Tamb=60 °C
50HZ Sine-half Wave
Rectification Average Value

3

 Forward Surge Current

  IFSM

 A

 15

Tamb=25 °C
50HZ Sine-half Wave,One Shot

4

Reverse Surge Current

  IRSM

μA   

-

 Pulse width 1ms triangle wave single pulse

5

 Maximum Junction Temperature

   Tjmax

 °C

 130


6

Storage Temperature

  Tstg

 °C

 -40~+130

 

 

Electric Specification

  NO.

    Item

Symbol

Unit

Rating

Test conditions

 1

Forward Voltage Drop

VFM

 V

15max

IFM=300mA

 2

Normal Temperature Reverse Current

IRM1

 μA

   5max

VRM=8KV

3

High Temperature Reverse Current

IRM2

μA

5max

Tamb=100°C
VRM=10KV

4

Reverse Breakdown Voltage

VZ

 KV

8

IR=300mA

5

Reverse Recovery Time

trr

nS

100

IF=2mA, IRM=4mA  90%

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