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High dV/dt Capability 320A Phase Control Thyristors

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High dV/dt Capability 320A Phase Control Thyristors
YZPST-T171-320-10
Phase Control Thyristors Features ● Center amplifying gate configuration ● Compression bonded encapsulation ● High dV/dt Capability ● Stud type, thread inch or metric
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Phase Control Thyristors

YZPST-T171-320-10

Features 

 Center amplifying gate configuration

 Compression bonded encapsulation

 High dV/dt Capability

 Stud type, thread inch or metric

Typical Applications

 Medium power switching

 DC power supplies



Maximum Ratings And Characteristics

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE




ITAV

Mean on-state current

320

A

Sinewave,180° conduction,Tc=84oC

ITRMS

RMS value of on-state current

502

A

Nominal value

ITSM

Peak one cycle surge

(non repetitive) current

7

kA

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I2t

I square t

240

KA2s

8.3 msec and 10.0 msec

IL

Latching current

700

mA

VD = 24 V; RL= 12 ohms

IH

Holding current

300

mA

VD = 24 V; I = 2.5 A

VTM

Peak on-state voltage

1.6

V

ITM = 1005 A

di/dt

Critical rate of rise

of on-state current

non-repetitive

1000

A/ms

Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM

repetitive

-

BLOCKING




VDRM

VRRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

1000

V


VDSM

VRSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

1100

V


IDRM

IRRM

Repetitive peak off state current Repetitive peak reverse  current

70

mA

Tj = 100 oC ,VRRM VDRM applied

dV/dt

Critical rate of voltage rise

500

V/ms

TJ=TJmax, linear to 80% rated VDRM

TRIGGEING




PG(AV)

Average gate power dissipation

3

W


PGM

Peak gate power dissipation

-

W


IGM

Peak gate current

6

A


IGT

Gate trigger current

250

mA

TC = 25 oC

VGT

Gate trigger voltage

2.5

V

TC = 25 oC

VGD

Gate non-trigger voltage

0.6

V

Tj = 125 oC

VT0


1.006

V

Tj = 125 oC

rT


0612


SWITCHING




tq

Turn-off time

125

ms

ITM=320A, TJ=TJmax, di/dt=10A/μs,

VR=100V,dv/dt=50V/μs, Gate 0V 100Ω, tp=500μs

td

Delay time

-

Gate current A, di/dt=40A/μs,

Vd=0.67%VDRM, TJ=25 oC

Thermal And Mechanical 

Symbol

Parameter

Values

Units

Test Conditions

Tj

Operating temperature

-40~125

oC


Tstg

Storage temperature

-40~125

oC


R th (j-c)

Thermal resistance - junction to case

0.085

oC/W

DC operation ,Single sided cooled

R th (c-s)

Thermal resistance - case to sink

-

oC/W

Single sided cooled

P

Mounting force

-

Nm

± 10 %

W

Weight

440

g

about

 

OUTLINE

YZPST-T171-320-10


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