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High current capability FAST recovery diode 2000V

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High current capability FAST recovery diode 2000V
YZPST-SD233N/R-20
High current capability FAST recovery diode 2000V
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High power FAST recovery diode

YZPST-SD233N/R-20

  FAST RECOVERY DIODES                                          

 Stud Version 

Features 

 

…       High power FAST recovery diode series

 

…       1.0 to 2.0 μs recovery time

 

…       High voltage ratings up to 5000V

 

…       High current capability

 

…       Optimized turn on and turn off characteristics

 

…       Low forward recovery

 

…       Fast and soft reverse recovery

 

…       Compression bonded encapsulation

 

…       Stud version B—8

 

…       Maximum junction temperature 125°C 

 

 

Typical Applications

 

…       Snubber diode forGTO

 

…       High voltage free-wheeling diode

 

…       Fast recovery rectifier applications



 

Forward Conduction

 

Parameters

PSTSD233N/R

Units

Conditions

IF(AV              Max. average forward current

 

@ Case temperature

250

A

180° conduction, half sine wave

60

°C

IF(RMX)           Max. RMS forward current

390

A




IFSM               Max. peak, one-cycle forward

 

non-repetitive surge current

5500

A

t = 10ms

No voltage

 

reapplied

Initial T=TJmax.

5760

A

t = 8.3ms

I2t             Maximum I2t for fusing

150000

A2s

t = 10ms

No voltage

 

reapplied

140000

A2s

t = 8.3ms

I2t          Maximum I2t for fusing

 

1500000

KA2√s

I2t for time t= I2t x t;

 

0.1 ≤ t≤ 10ms, VRRM = 0V

VFM                Maximum forward voltage drop

3.0

V

T= 25 oC, IFM = 1200 (arm)

IRRM               Max. DC reverse current

10.0

μA

T= 25 oC, per diode at VRRM

Trr

5

μs


 

 

Outlines Table

 


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