using certain failure and damage, often encounter in the process of failure and to determine the cause of damage and the problem is very important.
In this paper, the common damage phenomenon in the process of fast thyristor using enumerated and analyzed.
When fast thyristor damage needs to be checked after analysis the reason, can turn from the cooling tube core, open the core box and remove chips, observe its traces of damage, is to determine why.
Here are several common phenomenon analysis.
1, the voltage breakdown.
Fast thyristor as cannot withstand voltage and damage, there is a bright holes in its chips, sometimes need to expand mirror to see.
The reason may be that the pipe pressure drop itself or by circuit disconnect when the high voltage breakdown.
2, current damage.
Traces of damage is characterized by fast thyristor current chip was burned into a pit, and rough, its position in the far away from the control cabinet.
Damage of current rising rate.
Its traces and the current damage, and its near the control cabinet or on the control cabinet.
3, edge damage.
Fast thyristor in chip cylindrical chamfering, with small bright and clean pores.
With a magnifying glass to see the chamfer surface with fine fine metal cut.
This is caused by the careless manufacturer's installation.
It led to the breakdown voltage.
Fast thyristor forever only a little more than rivals, it is much to consider for the customer.
If interested in our fast thyristor or there is doubt, welcome your consultation.
We wholeheartedly for your service.
Whether it's automation or artificial intelligence, the rapid convergence of technology and business often determines custom rectifier’s competitiveness.
To be the safest, most progressive domestic custom rectifier, relentless in the pursuit of customer and employee excellence.
Consumers like these are interested not just in custom rectifier they will spend their money on, but also in the human and environmental impact of the supply chain that produces those goods.
The risk of silicon rectifier is reduced by silicon rectifier diode with the consumption of .