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Fast thyristor fr1000ax50 fast switching reverse-conducting thyristor rct

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Fast thyristor fr1000ax50 fast switching reverse-conducting thyristor rct
YZPST-FR1000AX50
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FR1000AX50  Fast Switching Reverse-conducting Thyristor

RCT FOR INVERTER AND CHOPPER APPLICATIONS

 2500 VDRM; 1550 A rms

YZPST-FR1000AX50

Features:

. All Diffused Structure

. Interdigitated Amplifying Gate Configuration                  

. Blocking capabilty up to 2500 volts

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

Device Type

VDRM (1)

VDSM (1)

FR1000AX50

2500

2500



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VDRM = Repetitive peak off state voltage

Repetitive peak off state leakage

IDRM


 

20 mA

80mA (3)

Critical rate of voltage rise

dV/dt (4)

700 V/msec


Notes:

All ratings are specified for Tj=25 oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied

      50Hz/60zHz sinusoidal waveform over the

      temperature range  -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential

     waveshape to 80% rated VDRM. Gate open.

     Tj = 125 oC.

(5) Non-repetitive value.

Conducting - on state

Parameter

Symbol


Max.

Typ.

Units

Conditions

RMS value of on-state current

ITRMS


1550


A

Nominal value

Average on-state current

IT(AV)

 


   

1000


 

A

Continuous single-phase,half sine wave,180°conduction

Peak one cycle surge

(non repetitive) current

 

ITSM


 

14000


 

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t


8.2.x105


A2s

8.3 msec and 10.0 msec

RNS reverse currrnt

IR(RMS)


630


A


Average reverse current

IR(AV)


    400


A

Continuous single-phase,half sine wave,180°conduction

Peak on-state voltage

VTM


2.2

 


V

ITM=1000A Tj = 125 oC

Peak reverse voltage

VRM


4.0


V

IRM=1200A, Tj = 125 oC

Critical rate of rise of on-state

current

di/dt


      300


A/ms

VD=1/2VDRM,ITM=800A f=60HIGM=1.5A,diG/dt=1.0A/us,Tj=125      

Critical rate of decrease of reverse conmmutating current

(di/dt)C


200


A/ms

ITM=4000A,tw=60us,IRM=4000A,dv/dt=700V/us,VDM=1/2VDRN,Tj=125,Saturable reactor7500v.us

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM


30


W

t= 40 us

Average gate power dissipation

PG(AV)


8


W


Peak gate current

IGM


10


A


Gate current required to trigger all units

IGT


350

 


mA

 

 

VD = 6 V;RL = 2 ohms;Tj = +25 oC

 

Gate voltage required to trigger all units

 

 

VGT


4

 

 


V

 

VD = 6 V;RL = 2 ohms;Tj = 25oC

 

Peak non- trigger voltage

VGD


0.2


V

Tj = 125 oC;VD=1/2VDRM

Dynamic

Parameter

Symbol

.

Max.

Typ.

Units

Conditions

Turn-off time  

tq


    50

 

        


ms

ITM =4000 A; di1/dt = -200A/ms;

di2/dt=50A/us,IRM=500A; dV/dt =700 V/ms VDR=1250V

Tj = 125 oC;tw=60us








THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125


oC


Storage temperature

Tstg

-40

+150


oC


Thyristor part thermal resistance - junction to fin

RQ (j-f)


0.022

 


oC/W

Double sided cooled

 

Diode part thermal resistamce – junction to fin

RQ (j-f)


0.070

 


oC/W

Double sided cooled

 

Mounting force

P


45


kN


Weight

W


670


g


YZPST-FR1000AX50-1





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