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Fast Stud Thyristor

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Fast Stud Thyristor
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Type:KK40A-1200V   

Features 

● Center amplifying gate configuration 

● Compression bonded encapsulation 

● High dV/dt Capability

● Stud type, thread inch or metric


Typical Applications

● Medium power switching

● DC power supplies


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Maximum Ratings And Characteristics

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

 

 

 

ITAV

Mean on-state current

40

A

Sinewave,180°; conduction,Tc=85°C

ITRMS

RMS value of on-state current

100

A

Nominal value

ITSM

Peak one cycle surge
(non repetitive) current

600

A

10.0 msec (50Hz), sinusoidal wave- shape, 180° conduction, Tj = 125 °C

I2t

I square t

2380

A²S

8.3 msec and 10.0 msec

IL

Latching current

400

mA

VD = 12 V; RL= 12 ohms

IH

Holding current

150

mA

VD = 12 V; I = 2.5 A

VTM

Peak on-state voltage

2.2

V

ITM = 126 A; Duty cycle £ 0.01%, Tj = 125 °C

Di/dt

Critical rate of rise
of on-state current

Non-repetitive

200

A/ms


Maximum Ratings And CharacteristicsTj =100 °C V D= 1/2VDRM, ITM=(2x ITAV) A 

Gate pulse:tw≥20μs, tr≤0.5μs fG=50Hz

IGM≥5 IGT

Repetitive

-

BL°C CKING

 

 

 

VDRM
       VRRM

Repetitive peak off state voltage
Repetitive peak reverse voltage

1200

V

 

VDSM
VRSM

Non repetitive peak off state voltage
Non repetitive peak reverse voltage

1300

V

 

IDRM
IRRM

Repetitive peak off state current Repetitive peak reverse current

5
30

mA

Tj = 25 °C ,VRRM VDRM applied
Tj = 125°C

DV/dt

Critical rate of voltage rise

200

V/ms

Tj = 100 °C VD =0.67 VDRM  Gate open

TRIGGEING

 

 

 

PG(AV)

Average gate power dissipation

2

W

 

PGM

Peak gate power dissipation

10

W

 

IGM

Peak gate current

3

A

 

IGT

Gate trigger current

100

mA

TC = 25°C

VGT

Gate trigger voltage

2.5

V

TC = 25°C

VGD

Gate non-trigger voltage

-

V

Tj = 125°C

SWITCHING

 

 

 

Tq

Turn-off time

35

ms

 

Qrr

Reverse recovery charge

-

 


Thermal And Mechanical 

Symbol

Parameter

Values

Units

Test Conditions

Tj

Operating temperature

-25~125

°C

 

Tstg

Storage temperature

-25~150

°C

 

R th (j-c)

Thermal resistance - junction to case

0.45

°C/W

DC operation, Single sided cooled

R th (c-s)

Thermal resistance - case to sink

0.1

°C/W

Single sided cooled

P

Mounting force

2 ~ 2.5

Nm

 

W

Weight

-

G


OUTLINE

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