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Fast Recovery Stud Diode

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Fast Recovery Stud Diode
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Features

High power FAST recovery diode series

1.0 to 2.0 μs recovery time

High voltage ratings up to 5000V

High current capability

Optimized turn on and turn off characteristics

Low forward recovery

Fast and soft reverse recovery

Compression bonded encapsulation

Stud version B—8

Maximum junction temperature 125°C


Typical Applications

Snubber diode for GTO

High voltage free-wheeling diode

Fast recovery rectifier applications


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Forward Conduction

Parameters

PSTSD233N/R

Units

Conditions

IF(AV Max. average forward current

@ Case temperature

250

A

180° conduction, half sine wave

60

°C

IF(RMX) Max. RMS forward current

390

A

 

 

 

IFSM Max. peak, one-cycle forward

non-repetitive surge current

5500

A

T = 10ms

No voltage

reapplied

Initial TJ =TJmax.

5760

A

T= 8.3ms

I²t Maximum I²t for fusing

150000

A²s

T = 10ms

No voltage

Reapplied

140000

A²s

T = 8.3ms

I² √ t  Maximum I² √ t for fusing 

1500000

KA²√s 

I²t for time t x  = I² √ t x  √ t x  ;

0.1  ≤  t x  ≤  10ms, V RRM  = 0V

V FM  Maximum forward voltage drop

3.0

V

TJ = 25 °C, IFM = 1200 (arm)

I RRM  Max. DC reverse current

10.0

μA

TJ = 25 °C, per diode at VRRM

Trr

5

μs


Voltage Ratings

Type numbe

Voltage Code

VRRM , max repe t itive

peak AC rev. voltage

TJ = TJ max .

V

VRSM , max non-repetitive

peak AC rev. voltage

TJ = TJ max .

V

IRRM max .

@ rated VRRM

TJ = TJ max .

mA

RRM max .

D.C. rev. curr .

@ T= 125°C

(μA)

 

 

 

PSTSD233N/R

20

26

30

35

40

45

50

2000

2600

3000

3500

4000

4500

5000

2100

2700

3100

3600

4100

4600

5100

20

20

20

20

20

20

20

500

500

500

500

500

500

500

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