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Diode Modules MDC200

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Diode Modules MDC200
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IFAV = 200 A

VRRM = 1000-2400V


VRRM (V)

VRSM (V)

TYPE

1000

1100

MDC200-10

1200

1300

MDC200-12

1600

1700

MDC200-16

1800

1900

MDC200-18

2200

2300

MDC200-22

2400

2500

MDC200-24



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Maximum Ratings

    





Symbol

Item

Conditions

Ratings

Unit

IF(AV)

Average Forward Current

Single phase,half wave, 180°conduction, TC=96

200

A

IF(RMS)

R.M.S.Forward Current

Single phase,half wave, 180° conduction, TC=109

310

A

IFSM

Surge Forward Current

1/2 cycle, 50/60HZ, peak value, non-repetitive

5000/5500

A

I²t

I²t

Value for one cycle of surge current

125000

A²S

Tj

Junction Temperature

 

-40 to +150

Tstg

Storage Temperature

 

-40 to +125

VISO

Isolation Breakdown Voltage(R.M.S.)

Main Terminal to case 1minute

2500

V

Md

Mounting torque 

Mounting(M6)

Recommended Value 2.5-3.9(25-40)

4.7(48)

Nm(kgf cm)

Terminal(M5)

Recommended Value 8.8-10.0(90-105)

9.8(100)


Electrical Characteristics

Symbol

Item

Conditions

Ratings

Unit

IRRM

Repetitive Peak Reverse Current, max.

Tj=150  at VRRM,Singe phase,half wave

8.0

MA

VFM

Forward Voltage Drop, max.

Foward current 200A , Tj=25  
Inst. measurement

1.4

V

Rth(j-c)

Thermal Impedance, max.

Junction to case

0.18

℃/W

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