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Custom standard recovery stud silicon power diode 1800V 860A

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Custom standard recovery stud silicon power diode 1800V 860A
YZPST-D860-18C
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Standard Recovery Stud Diode

YZPST-D860-18C

860A Standard Recovery Stud Diode 1800V

SymbolTyp.Units
VRRM1800V
VRSM1900V
IF(AV)M860A
IF(RMS)M1250A
IFSM12kA
I2t725kA2s
VFM1.4V
VF00.7V


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Forward Conduction


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Repetitive peak reverse voltage

VRRM



1800

V


Non repetitive peak reverse voltage

VRSM



1900

V


Max. average forward current

IF(AV)M



860

A

Sinewave,180o conduction,Tc=80oC

Max. RMS forward current

IF(RMS)M



1250

A

Nominal value

Max. peak, one-cycle forward,

non-repetitive surge current

IFSM



12

kA

10.0 msec (50Hz), half sinewave,

Tvj = Tvj max, VRM = 0.5VRRM

Maximum I2t for fusing

I2t



725

kA2s

Max. forward voltage drop

VFM



1.40

V

IFM = 2600A; Tvj = 25oC

Threshold voltage

VF0



0.7

V


Slope resistance

rT



1.5



Thermal and Mechanical Specifications

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+150


oC


Storage temperature

Tstg

-40

+150


oC


Reverse recovery charge

Qrr



-

μc


Thermal resistance - junction to case

RQ (j-c)


-

-

90

oC /kW


Thermal resistamce - case to heatsink

RQ (c-s)


-

-

80

oC /kW


Mounting force

P

-

-

1.7

kN

± 20%

Weight

W

-

-

950

g

About

Case style




-


See Outline Table

CASE OUTLINE AND DIMENSIONS.


YZPST-D860-18-1




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