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Custom capsule thyristor C712L thyristor power controller KT55CT

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Custom capsule thyristor C712L thyristor power controller KT55CT
YZPST-C712L
Features: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 2100 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device
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REVERSE CONDUCTING THYRISTORS

Features:

. Integrated freewheeling diode

. Optimized for low dynamic losses

 

Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

  2000

2000

2100


VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

10 mA 70 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000V/ µsec


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Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)


1185


A

Sinewave,180o conduction,Tc=80oC

RMS value of on-state current

ITRMS


1700


A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

 

ITSM


-

 

18500


A

 

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t


1.66x106


A2s

8.3 msec and 10.0 msec

Latching current

IL


-


mA

VD = 24 V; RL= 12 ohms

Holding current

IH


-


mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM


1.45


V

ITM = 1000 A; Duty Cycle £ 0.01%; Tj =1 25 oC

Critical rate of rise of on-state

current (5, 6)

di/dt


800


A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt


200


A/ms

Switching from VDRM £ 1000 V

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM


100


W

t= 40 us

Average gate power dissipation

PG(AV)


5


W


Peak gate current

IGM


-


A


Gate current required to trigger all units

IGT


-

120

-


mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT


-

3.0

-

 


V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM


20


V


Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td


-

0.7

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq


40

-

ms

ITM = 1000 A; di/dt = 25 A/ms;

VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr


*


mC

ITM = 1000 A; di/dt = 25 A/ms;

VR ³ -50 V



HERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125


oC


Storage temperature

Tstg

-40

+125


oC


Thermal resistance - junction to case

RQ (j-c)


0.023

-


oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)


0.0075

-


oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

22.2

26.6


kN


Weight

W



-

g

About


CASE OUTLINE AND DIMENSIONS


YZPST-C712L


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