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Capabilty Disc Powerex Thyristor DCR804 Configuration

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Capabilty Disc Powerex Thyristor DCR804 Configuration
YZPST-DCR804
HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
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L/C, T/T
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Features:

  . All Diffused Structure

   . Center Amplifying Gate Configuration                 

   . Blocking capabilty up to 2000 volts

   . Guaranteed Maximum Turn-Off Time

   . High dV/dt Capability

   . Pressure Assembled Device

Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

  2000

2000

2100

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

15 mA 35 mA (3)

Critical rate of voltage rise

dV/dt (4)

200V/ µsec


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Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average   value of on-state current

IT(AV)


900


A

Sinewave,180o   conduction,Tc=67oC

RMS   value of on-state current

ITRMS


1400


A

Nominal   value

Peak   one cPSTCle surge

(non   repetitive) current

 

ITSM


13000

 

12000


A

 

A

8.3   msec (60Hz), sinusoidal wave-

shape,   180o conduction, Tj = 125 oC

10.0   msec (50Hz), sinusoidal wave-

shape,   180o conduction, Tj = 125 oC

I   square t

I2t


700


KA2s

8.3   msec and 10.0 msec

Latching   current

IL


800


mA

VD   = 24 V; RL= 12 ohms

Holding   current

IH


400


mA

VD   = 24 V; I = 2.5 A

Peak   on-state voltage

VTM


1.80


V

ITM   = 2200A; Duty cPSTCle £ 0.01%

 

Critical   rate of rise of on-state

current   (5, 6)

di/dt


400


A/ms

Switching   from VDRM £ 1000 V,

non-repetitive

Critical   rate of rise of on-state

current   (6)

di/dt


150


A/ms

Switching   from VDRM £ 1000 V

ELECTRICAL CHARACTERISTICS AND RATINGS

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak   gate power dissipation

PGM


200


W

tp   = 40 us

Average   gate power dissipation

PG(AV)


5


W


Peak   gate current

IGM


10


A


Gate   current required to trigger all units

IGT


300

150

125


mA

mA

mA

VD   = 6 V;RL = 3 ohms;Tj = -40 oC

VD   = 6 V;RL = 3 ohms;Tj = +25 oC

VD   = 6 V;RL = 3 ohms;Tj = +125oC

Gate   voltage required to trigger all units

 

 

VGT

 

 

0.15

5

3

 


V

V

V

VD   = 6 V;RL = 3 ohms;Tj = -40 oC

VD   = 6 V;RL = 3 ohms;Tj = 0-125oC

VD   = Rated VDRM; RL = 1000 ohms;

Tj   = + 125 oC

Peak   negative voltage

VGRM


5


V


Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay   time

td


1.5

0.7

ms

ITM   = 50 A; VD =   Rated VDRM

Gate   pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off   time (with VR = -50 V)

tq


200

 

125

ms

ITM   = 500 A; di/dt = 25 A/ms;

VR   ³   -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM;   VG = 0;

Tj   = 125 oC; Duty cPSTCle ³ 0.01%

Reverse   recovery charge

Qrr


*


mC

ITM   = 500 A; di/dt = 25 A/ms;

VR   ³   -50 V

       * For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating   temperature

Tj

-40

+125


oC


Storage   temperature

Tstg

-40

+150


oC


Thermal   resistance - junction to case

RQ (j-c)


0.040

0.080


oC/W

Double   sided cooled

Single   sided cooled

Thermal   resistamce - case to sink

RQ (c-s)


0.015

0.030


oC/W

Double   sided cooled *

Single   sided cooled *

Mounting   force

P

13.3

15.5


kN


Weight

W



225

g


       * Mounting surfaces smooth, flat and greased

      Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data

CASE OUTLINE AND DIMENSIONS

Sym

A

B

C

D

H

mm

59

34

53

3.5×3

26±1


HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS

Notes:

All ratings are specified for Tj=25 oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied

      50Hz/60zHz sinusoidal waveform over the

      temperature range  -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential

     waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance

      with EIA/NIMA Standard RS-397, Section

      5-2-2-6. The value defined would be in addi-

      tion to that obtained from a snubber circuit,

      comprising a 0.2 mF capacitor and 20 ohms

      resistance in parallel with the thristor under test.

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