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Asymmetric thyristor Applications

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Asymmetric thyristor Applications
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Features:

. All Diffused Structure

. Center Amplifying Gate Configuration                  

. Blocking capabilty up to 2000 volts

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device


Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

  10

2400/2800

10


VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

5 mA 40 mA (3)

Critical rate of voltage rise(4)

dV/dt 

1000V/ µsec


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HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS

Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal

     waveform over the temperature range  -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM.

     Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard

      RS-397, Section 5-2-2-6. The value defined would be in addi-tion to that

      obtained from a snubber circuit, comprising a 0.2 mF capacitor and 20

      ohmsresistance in parallel with the thristor under test.

 CONDUCTING - ON STATE 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

341

 

A

Sinewave,180o conduction,Tc =85oC

RMS value of on-state current

ITRMS

 

1040

 

A

Nominal value

Peak one cycle surge  (non repetitive) current

ITSM

 

-5700

 

A

A

8.3 msec (60Hz), sinusoidal wave-shape, 180o conduction,Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave-shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

1.5

 

KA2s

8.3 msec and 10.0 msec

Latching current

IL

 

-

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

1000

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

2.45

 

V

ITM = 1000 A; Duty cycle  0.01%

Critical rate of rise of on-state current (5, 6)

Di/dt

 

2000

 

A/ms

Switching from VDRM  1000 V, non-repetitive

Critical rate of rise of on-state current (6)

Di/dt

 

1000

 

A/ms

Switching from VDRM  1000 V

ELECTRICAL CHARACTERISTICS AND RATINGS

For guaranteed max. value, contact factory.


Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

30

 

W

Tp = 40 us

Average gate power dissipation

PG(AV)

 

10

 

W

 

Peak gate current

IGM

 

-

 

A

 

Gate current required to trigger all units

IGT

 

400

 

MA
MA
MA

VD = 6 V;RL = 3 ohms;Tj = -40 oC
VD = 6 V;RL = 3 ohms;Tj = +25 oC
VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

VGT

 

 

- 3

 

V
V
V

VD = 6 V;RL = 3 ohms;Tj = -40 oC
VD = 6 V;RL = 3 ohms;Tj = 0-125oC
VD = Rated VDRM; RL = 1000 ohms;
Tj = + 125 oC

Peak negative voltage

VGRM

 

-

 

V



 

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

 

1

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 s; tp = 20 s

Turn-off time (with VR = -50 V)

tq

-

-

55

ms

ITM = 500 A; di/dt = 25 A/s;

VR  -50 V; Re-applied dV/dt = 20 V/s linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle  0.01%

Reverse recovery charge

Qrr

 

*

 

mC

ITM = 500 A; di/dt = 25 A/s;

VR  -50 V

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thermal resistance - junction to case

R(j-c)

 

 

-
-

K/KW

Double sided cooled *
Single sided cooled *

Thermal resistamce - case to sink

R (c-s)

 

 

-
-

K/KW

Double sided cooled *
Single sided cooled *

Thermal resistance - junction to sink

R (j-s)

 

 

50
100

K/KW

Double sided cooled *
Single sided cooled *

Mounting force

P

5

9

-

kN

 

Weight

W

 

 

-

g


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