Custom standard recovery stud silicon power diode 1800V 860A
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High Frequency High Voltage Diode
YZPST-HV37-10F
8KV High Frequency High Voltage Diode 200mA
Characteristics
1. High junction temperature up to 130℃
2. Low forward voltage drop, and small current leakage
3. Avalanche breakdown protection
4.Max reverse recovery time to 70nS
5. Excellent properties against HV surge impact
6. Axial leading wires which are weldable
7. Epoxy package with anti-corrosion properties on surface
Application
• Rectification for microwave oven
• Industrial microwave power supplies
• HF X ray source
• Laser power supply
• Voltage multiplying circuits
• Rectification of power supplies for other electronic devices
1.Main Specification
No. |
Item |
Symbol |
Unit |
Rating |
Conditions |
1 |
Repetitive Peak Reverse Voltage |
VRRM |
KV |
10 | |
2 |
Average Forward Current |
IF (AV) |
mA |
200 | Tamb=60 oC
50HZ Sine-half Wave
Rectification Average Value |
3 |
Forward Surge Current |
IFSM |
A |
15 | Tamb=25 oC
50HZ Sine-half Wave,One Shot |
4 |
Reverse Surge Current |
IRSM |
μA |
5 | |
5 |
Maximum Junction Temperature |
Tjmax |
oC |
130 | |
6 |
Storage Temperature |
Tstg |
oC |
-40~+130 |
2. Electric Specification
NO. |
Item |
Symbol | Unit |
Rating |
Test conditions |
1 |
Forward Voltage Drop |
VFM |
V |
18max |
IFM=200mA |
2 |
Normal Temperature Reverse Current |
IRM1 |
μA |
5max |
VRM=8KV |
3 |
High Temperature Reverse Current |
IRM2 |
μA |
5max | Tamb=100oC VRM=8KV |
4 |
Reverse Breakdown Voltage |
VZ |
KV |
8 |
IR=200mA |
5 |
Reverse Recovery Time |
trr |
nS |
70 |
IF=2mA, IRM=4mA 90% |
(Tamb=25 oC, unless otherwise specified)
3. Application
For high voltage rectification;
4. Derating of Forward Current
5.Dimensions (in mm))
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